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이 학술지의 논문 검색
Ultrathin dielectrics in silicon microelectronics - an overview
Feldman, L. C.;Gusev, E. P.;Garfunkel, E. Kluwer Academic Publishers 1997 p.1-24
Study of the Si/SiO~2 interface using positrons: present status and prospects
De Nijs, J. M. M.;Clement, M. Kluwer Academic Publishers 1997 p.25-38
Medium energy ion scattering studies of silicon oxidation and oxynitridation
Garfunkel, E.;Gusev, E. P.;Lu, H. C.;Gustafsson, T. Kluwer Academic Publishers 1997 p.39-48
Synchrotron and conventional photoemission studies of oxides and N~2O oxynitrides
Lu, Z.-H. Kluwer Academic Publishers 1997 p.49-64
Stress in the SiO~2/Si structures formed by thermal oxidation
Szekeres, A. Kluwer Academic Publishers 1997 p.65-78
Modeling the oxide and the oxidation process: can silicon oxidation be solved?
Stoneham, A. M.;Sofield, C. J. Kluwer Academic Publishers 1997 p.79-88
Core-level shifts in Si(001)-SiO~2 systems: the value of first-principle investigations
Pasquarello, A.;Hybertsen, M. S.;Rignanese, G.-M.;Car, R. Kluwer Academic Publishers 1997 p.89-102
Massoud, H. Z. Kluwer Academic Publishers 1997 p.103-116
Chemical perspectives on growth and properties of ultrathin SiO~2 layers
Cerofolini, G. F.;Re, N. Kluwer Academic Publishers 1997 p.117-130
A theoretical model of the Si/SiO~2 interface
Markovits, A.;Minot, C. Kluwer Academic Publishers 1997 p.131-146