TiN이 증착된 SiO/TiN 박막의 전압-전류 특성 = Voltage-Current Characteristics of Thin Films of SiO/TiN Deposited TiN

다국어 초록 (Multilingual Abstract)

In this study, the evaporation of SiO layers with different thickness on Si wafer(n-100) is conducted by using the RF sputtering method. Thin films are made with the structure of Si/SiO and Si/SiO/TiN by evaporating TIN which is used as a diffusion barrier of non-resistant superintegrated semiconductor circuit. The research is performed to increase the I-V characteristics depending upon the SiO thickness and the reliability and reproducibility of the TIN thin film. It is shown that, since the TIN is diffused into SiO surface and fosters the potential barrier highly in the SiO/TiN thin film, the saturation voltage appears after the SiO thin film does. The thicker the SiO film becomes, the weaker the current variation does and the less leakage current the TiN deposited thin film has. The leakage current variation with a little slope is found in the negative voltage zone due to the effect of the trap state density near the electrode.
The spiking which occurs when the film is too very thin can be reduced by adding TiN. The stability can be obtained due to no pervasion of A1 into SiO. The experimental result matches the Ohm s law and satisfies the equation of current.