Highly efficient electroluminescence devices with a mixed layer of SnO2 and colloidal quantum dots

다국어 초록 (Multilingual Abstract)

We demonstrate the high efficiency of quantum dot light-emitting diodes (QLEDs) that consist of amixed layer of SnO2 nanoparticles (NPs) and quantum dots (QDs). A stable mixture of SnO2 NPs andQDs is prepared in chlorobenzene and then applied to QLEDs with no separate electron transportlayer (ETL). QLEDs with such a simplified structure produce a maximum luminance of 142,855 cd/m2,an EQE of 9.42%, and a current efficiency of 41.18 cd/A that result from the improved charge balanceof the mixed layer. This produces one of the best device performances of QLEDs with a non-ZnO inorganicETL, clearly indicating the remarkable promise of using SnO2 NPs as an inorganic ETL for QLEDs.
Moreover, the reduction of fabrication steps in this solution-based process proves advantageous tonext-generation display technology.

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