Improvement of Minority Carrier Life Time in N-type Monocrystalline Si by the Czochralski Method

다국어 초록 (Multilingual Abstract)

The installation amount of solar power plants increases every year. Multi-crystalline Si solar cells comprise a large share of the marketof solar power plants. Multi-crystalline and single-crystalline Sisolar cells are competing against one another in the market. Manysingle-crystalline companies are trying to develop and produce ntypesolar cells with higher cell efficiency than that of p-type. In ntypewafers with high cell efficiency, wafer quality has becomeincreasingly important. In order to make ingots with higher MCLT,the effects of both poly types related to metal impurities and pullspeeds related to vacancy concentration on minority carrier life timewere studied. In the final part of ingots, poly types related to themetal impurities are a dominant factor on MCLT. In the initial partof ingots, pull speeds related to vacancy concentration are adominant factor on MCLT.

참고문헌 (Reference)

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