SiC/Co 반응의 계면화학 = Interface chemistry of SiC/Co reaction

다국어 초록 (Multilingual Abstract)

Reaction coulples of SiC with cobalt were annealed in an Ar/4 vol% $H_2$ atmosphere at temperatures between $950^{\circ}C$ and $1250^{\circ}C$for various times between 4 and 100 h. At temperatures above $950^{\circ}C$, solid state reactions lead to the formation of various silicides with carbon precipitates. The typical reaction layer sequence was $SiC/CoSi + C/CozSi + C/CozSi/CozSi + C/{\cdot\cdot\}/CO_2Si/CO$ in the reaction zone. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was examined and discussed in terms of reaction kinetics and thermodynamic considerations. The growth of the reaction zone has a square root of time dependence. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic gowth of the reaction zone. The mechanical properties of the reaction zones were determined by the microhardness test.