Fringe-Field Switching (FFS) 모드에서 잔상 정량화에 관한 연구 = Study on the Quantitativity of Image Sticking in the Fringe-field Switching(FFS) Mode

다국어 초록 (Multilingual Abstract)

We studied the quantitativity of the image sticking which is occured by the resicual DC in the fringe-electric field switching (FFS) mode. Actually, in the FFS mode driven by the strong fringe electric field, the asymmetric residual DC was formed in the bottom substrate. It made the impurity ion stick to the alignment layer such as polyimde layer. Thus, the differnece of the luminance existes after the stress check pattern is applied to the panel so that we can see the image sticking. This image sticking decreases as the residual DC value between specific patterns decreases. Therefore, it is necessary to control the residual DC for the FFS mode with the high image quality. It is possible to eliminate the image stiking when the extra pixel voltage is applied through the circuit tunning for reducing the difference of residual DC accroding to the panel position.

참고문헌 (Reference)

1 "유전율 이방성이 음인 액정을 이용한 이중 도메인 FFS 모드의 전기광학 특성" 15 (15): 720-, 2002.

2 "모드에서 액정의 유전율 이방성에 따른 동력학 안정성에 관한 연구" 16 (16): 224-, 2003.

3 "Pixel structure of the ultra-FFS TFT-LCD for strong pressure-resistant characteristic" 224-, 2002.

4 "Electro-optical characteristics and switching behavior of the in-plane-switching mode" 67 (67): 3895-, 1995.

5 "Electro-optic characteristics and switching principle of a nematic liquid crystal cell controlled by fringe-field switching" 73 (73): 2881-, 1998.

6 "A study on VHR and residual DC property in the IPS cells" 15 (15): 169-, 2002.