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      반도전성 실리콘 고무의 플라즈마 처리에 따른 표면의 특성변화 = Changes of Surface Properties by Plasma Treatment on the Surface of Semiconductive Silicone Rubber

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      https://www.riss.kr/link?id=A101055492

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      다국어 초록 (Multilingual Abstract)

      This paper was investigated the changes of surface properties of high-temperature-vulcanized (HTV) semiconductive silicone rubber due to oxygen plasma discharge. The modifications produced on the silicone rubber surface by oxygen plasma were accessed using Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), contact angle and Surface Roughness Tester. The results of the chemical analysis Showed that C-H bonds were broken due to plasma discharge and Silica-like bonds (SiOx, x=$3\~4$) increased. It is thought that the above changes lead to the increase of surface energy of high-temperature-vulcanized (HTV) semiconductive silicone rubber also, Surface roughness was increased with cleavage of side-chains and oxidation process, it confirmed change as the SEM. The micromorphology of surface and hydrophobicity due to plasma discharge based on our results were discussed.
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      This paper was investigated the changes of surface properties of high-temperature-vulcanized (HTV) semiconductive silicone rubber due to oxygen plasma discharge. The modifications produced on the silicone rubber surface by oxygen plasma were accessed ...

      This paper was investigated the changes of surface properties of high-temperature-vulcanized (HTV) semiconductive silicone rubber due to oxygen plasma discharge. The modifications produced on the silicone rubber surface by oxygen plasma were accessed using Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), contact angle and Surface Roughness Tester. The results of the chemical analysis Showed that C-H bonds were broken due to plasma discharge and Silica-like bonds (SiOx, x=$3\~4$) increased. It is thought that the above changes lead to the increase of surface energy of high-temperature-vulcanized (HTV) semiconductive silicone rubber also, Surface roughness was increased with cleavage of side-chains and oxidation process, it confirmed change as the SEM. The micromorphology of surface and hydrophobicity due to plasma discharge based on our results were discussed.

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      참고문헌 (Reference)

      1 "Surface analysis of plasma-treated polydimethylsiloxane by x-ray photoelectron spectroscopy and surface voltage decay" 35 : 5 445-, 2003.

      2 "Outdoor HV compsite polymeric insulators" 6 (6): 557-, 1999.

      3 "Hydrophobicity changes in silicone rubber" 6 (6): 703-, 1999.

      4 "Electrical properties of polymer chemical" New York 200-, 1987.

      5 "Crosslinked polydimethylsiloxane exposed to oxygen plasma studied by neutron reflecto- metry and other surface specific techniques" 41 (41): 6851-, 2000.

      6 "Adhesion and electrical performance by plasma treatment of semiconductive silicone rubber Proceedings of the fifth IASTED International conference POWER AND ENERGY SYSTEMS" 306 15-17, 2005.

      1 "Surface analysis of plasma-treated polydimethylsiloxane by x-ray photoelectron spectroscopy and surface voltage decay" 35 : 5 445-, 2003.

      2 "Outdoor HV compsite polymeric insulators" 6 (6): 557-, 1999.

      3 "Hydrophobicity changes in silicone rubber" 6 (6): 703-, 1999.

      4 "Electrical properties of polymer chemical" New York 200-, 1987.

      5 "Crosslinked polydimethylsiloxane exposed to oxygen plasma studied by neutron reflecto- metry and other surface specific techniques" 41 (41): 6851-, 2000.

      6 "Adhesion and electrical performance by plasma treatment of semiconductive silicone rubber Proceedings of the fifth IASTED International conference POWER AND ENERGY SYSTEMS" 306 15-17, 2005.

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2026 평가예정 재인증평가 신청대상 (재인증)
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      2013-01-01 평가 등재 1차 FAIL (등재유지) KCI등재
      2010-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2008-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2006-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2005-05-30 학회명변경 영문명 : 미등록 -> The Korean Institute of Electrical and Electronic Material Engineers KCI등재
      2004-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2001-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      1998-07-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.13 0.13 0.13
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.14 0.14 0.247 0.06
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