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      KCI등재후보

      Al-Ta 합금박막의 구조적 인자가 전기적 특성 및 발열 특성에 미치는 영향 = Influences of Structural Features on Electrical Properties and Heating Characteristics of Al-Ta Alloy Thin Films

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      https://www.riss.kr/link?id=A101205004

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      다국어 초록 (Multilingual Abstract)

      The $Al_xTa_{1-x} (x=0.0{\~}1.0)$ alloy thin films were deposited by RF-magnetron sputtering system, and the crystal quality, surface morphology, and electrical properties were examined using XRD, AFM, 4-point probe techniques in this study. The thin films were grown according to the alloy compositions first, and the effects of film thickness and mask patterns were investigated afterwards. Also, the heating characteristics were examined by heat controller. The obtained results showed that the high electrical resistivity was obtained for Al content $x=6.63at\%$, and the even higher resistivity was accomplished for the samples with smaller thickness and narrower width. The heating temperature demonstrated the identical trend to the electrical properties, and the highest heating temperature ($400^{\circ}C$) and output power ($12.6W/cm^2$) were obtained for the sample with Al content $x=6.63\%$, film thickness d=500 nm, film width w=1.5 mm.
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      The $Al_xTa_{1-x} (x=0.0{\~}1.0)$ alloy thin films were deposited by RF-magnetron sputtering system, and the crystal quality, surface morphology, and electrical properties were examined using XRD, AFM, 4-point probe techniques in this study. The thin ...

      The $Al_xTa_{1-x} (x=0.0{\~}1.0)$ alloy thin films were deposited by RF-magnetron sputtering system, and the crystal quality, surface morphology, and electrical properties were examined using XRD, AFM, 4-point probe techniques in this study. The thin films were grown according to the alloy compositions first, and the effects of film thickness and mask patterns were investigated afterwards. Also, the heating characteristics were examined by heat controller. The obtained results showed that the high electrical resistivity was obtained for Al content $x=6.63at\%$, and the even higher resistivity was accomplished for the samples with smaller thickness and narrower width. The heating temperature demonstrated the identical trend to the electrical properties, and the highest heating temperature ($400^{\circ}C$) and output power ($12.6W/cm^2$) were obtained for the sample with Al content $x=6.63\%$, film thickness d=500 nm, film width w=1.5 mm.

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      참고문헌 (Reference)

      1 "Thermally Activated Amorphous Phase Formation in Cold-Rolled Multilayers of Al-Ni, Al-Ta, Al-Fe and Zr-Cu" 1999

      2 "Stress Measurement in Al-Si-Cu interconnection Layers" 142 : 1946-, 1995

      3 "SEM Investigation of Pillared Microstructures Formed by Electrochemical Anodization" A67 : 487-, 1998

      4 "Oxidation Characteristic of Al-Ta thin Alloy Films as a Passivation Layer on Cu" 35 : 704-, 1996

      5 "Ohmic Contacts to n-type GaN Using Pd/Al Metallization" 25 : 819-, 1996

      6 "Ohmic Contacts to n-type GaN Using Pd/Al Metallization" 25 : 819-, 1996

      7 "Morphology of sputter deposited Al alloy films" 340 : 306-, 1999

      8 "Manufacture of Carbon Heating Element" 2000

      9 "Influence of Adding Transition Metal Element to an Aluminum Target on Electrical Resistivity and Hillock Resistance in Sputter-Deposited Aluminum Alloy Thin Films" A14 (A14): 2728-, 1996

      10 "Effects of Nd Content in Al Thin Films on Hillock Formation" A15 : 2339-, 1997

      1 "Thermally Activated Amorphous Phase Formation in Cold-Rolled Multilayers of Al-Ni, Al-Ta, Al-Fe and Zr-Cu" 1999

      2 "Stress Measurement in Al-Si-Cu interconnection Layers" 142 : 1946-, 1995

      3 "SEM Investigation of Pillared Microstructures Formed by Electrochemical Anodization" A67 : 487-, 1998

      4 "Oxidation Characteristic of Al-Ta thin Alloy Films as a Passivation Layer on Cu" 35 : 704-, 1996

      5 "Ohmic Contacts to n-type GaN Using Pd/Al Metallization" 25 : 819-, 1996

      6 "Ohmic Contacts to n-type GaN Using Pd/Al Metallization" 25 : 819-, 1996

      7 "Morphology of sputter deposited Al alloy films" 340 : 306-, 1999

      8 "Manufacture of Carbon Heating Element" 2000

      9 "Influence of Adding Transition Metal Element to an Aluminum Target on Electrical Resistivity and Hillock Resistance in Sputter-Deposited Aluminum Alloy Thin Films" A14 (A14): 2728-, 1996

      10 "Effects of Nd Content in Al Thin Films on Hillock Formation" A15 : 2339-, 1997

      11 "Design and Process Technology for Large Area and High-Resolution TFT/LCDs" japandisplay19921992

      12 "Annealing Behavior of Alloy Films for Interconnection Conductor in Microelectonic Devices" b9 : 2542-, 1991

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2022 평가예정 계속평가 신청대상 (계속평가)
      2021-12-01 평가 등재후보로 하락 (재인증) KCI등재후보
      2018-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2015-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2011-06-28 학술지명변경 한글명 : 마이크전자 및 패키징학회지 -> 마이크로전자 및 패키징학회지
      외국어명 : The Microelectronics and Packaging Society -> Jornal of the Microelectronics and Packaging Society
      KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재 1차 FAIL (등재유지) KCI등재
      2007-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2004-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2003-01-01 평가 등재후보 1차 PASS (등재후보1차) KCI등재후보
      2001-07-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.48 0.48 0.43
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.39 0.35 0.299 0.35
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