금속 산화물을 기반으로 한 이산화탄소 포집과 저장에 대한 최근 기술

국문 초록 (Abstract)

이산화탄소 포집 및 저장기술(CCS)은 인류발생적 요인에 의한 이산화탄소 배출 증가와 그로 인한 기후변화를 완화시킬 수 있는 기술 중 하나이다. 그 중, 매체 순환식 연소(chemical looping combustion, CLC)와 칼슘루핑(calcium looping) 기술은 현재 아민 스크러빙(amine scrubbing)을 대체할 수 있는 유망한 기술로 주목받고 있다. 두 방법 모두 금속 산화물을 이용한 연속적인 순환 사이클 반응에 의한 것이다. 전체적인 이산화탄소 포집 및 저장 성능의 향상을 위해서는 사이클을 거듭 하며 발생하는 소결(sintering)로 인한 안정성 저하 문제를 해결하고 금속 산화물의 구조 또한 최적화해야 한다. 금속 산화물 표면에 얇은 박막을 형성하는 것은 소결로 인한 손상을 막을 수 있는 방법이다. 이러한 박막 제조 기술로 잘 알려진 기술에는 화학기상증착법(chemical vapor deposition)과 원자층증착기술(atomic layer deposition)이 있다. 본 총설에서는 CVD, ALD 기술을 비롯하여 효과적인 반응 안정성 향상을 위한 안정제 첨가 방법, 금속 산화물 구조 개선에 대한 다양한 최근 기술들을 다루었다.

다국어 초록 (Multilingual Abstract)

CO2 capture and storage (CCS) is one of the promising technologies that can mitigate ever-growing emission of anthropogenic carbon dioxide and resultant climate change. Among them, chemical looping combustion (CLC) and calcium looping (CaL) are getting increasing attention recently as the prospective alternatives to the existing amine scrubbing. Both methods use metal oxides in the process and consist of cyclic reactions. Yet, due to their cyclic nature, they both need to resolve sintering-induced cyclic stability deterioration. Moreover, the structure of the metal oxides needs to be optimized to enhance the overall performance of CO2 capture and storage. Deposition of thin film coating on the metal oxide is another way to get rid of wear and tear during the sintering process. Chemical vapor deposition or atomic layer deposition are the well-known, established methods to form thin film membranes, which will be discussed in this review. Various effective recent developments on structural modification of metal oxide and incorporation of stabilizers for cyclic stability are also discussed.

목차 (Table of Contents)

• 요 약
• Abstract
• 1. Introduction
• 2. Carbon Dioxide Capture and Storage
• 2.1. Calcium oxide
• 2.2. Modified calcium oxide
• 2.3. Magnesium oxide
• 2.4. Calcium looping
• 2.4. Stabilized metal oxide by atomic layer deposition
• 3. Conclusions
• Reference

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