Wet chemical surface modification of ITO by a self assembled monolayer for an organic thin film transistor

다국어 초록 (Multilingual Abstract)

Indium tin oxide (ITO), which is used as an electrode in organic thin film transistors (OTFT), was modified with a selfassembled
monolayer (SAM) by wet chemical surface modification. The surface of the ITO was treated by a dipping method
in a solution of 2-chloroethane phosphonic acid (2-CEPA) at room temperature. The work function in the ITO which was
modified with the SAM in the 2-CEPA was 5.43 eV. The surface energy and a transmittance were unchanged within an error
range. In this study, therefore, the possibility of ohmic contact is demonstrated in the interface between the ITO and the
organic semiconductors. These results suggest that the treatment of the ITO with the SAM can greatly enhance the
performance of an OTFT.

다국어 초록 (Multilingual Abstract)

Indium tin oxide (ITO), which is used as an electrode in organic thin film transistors (OTFT), was modified with a selfassembled
monolayer (SAM) by wet chemical surface modification. The surface of the ITO was treated by a dipping method
in a solution of 2-chloroethane phosphonic acid (2-CEPA) at room temperature. The work function in the ITO which was
modified with the SAM in the 2-CEPA was 5.43 eV. The surface energy and a transmittance were unchanged within an error
range. In this study, therefore, the possibility of ohmic contact is demonstrated in the interface between the ITO and the
organic semiconductors. These results suggest that the treatment of the ITO with the SAM can greatly enhance the
performance of an OTFT.

참고문헌 (Reference)

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