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A TREND OF SOI WAFER TECHNOLOGY FOR THE NEXT GENERATION DEVICE APPLICATIONS
Ryoo, Kun-Kul 한국재료학회 1995 p.1069-1075
Zn(S, Se) EPITAXIAL LAYERS GROWN ON GaAs(100) BY MOLECULAR BEAM EPITAXY
Leem, Jae-Young, Son, Jeong-Sik,Bae, In-Ho,Noh, Sam-Kyu,Shin, Eun-Joo,Kim, Dong-Ho,Park, Hae-Sung,Kim, Tae-Il 한국재료학회 1995 p.1077-1081
GERMANIUM RELATED DEEP CENTERS IN AlGaAs EPITAXIAL LAYERS
Torchinskaya, T.V., Kooshnirenko, V.I.,Gnatenko, V.I. 한국재료학회 1995 p.1083-1085
B${F_2}^{+/}_{11}^+$MIXED ION IMPLANTATION FOR P+ SHALLOW JUNCTION FORMATION
Sohn, Sohn, Yong-Sun, Ra, Ra, Geum-Joo,Na, Na, Shang-Goon,Lee, Lee, Dong-Ho,Kim, Kim, Chung-Tae 한국재료학회 1995 p.1087-1092
Study on the Growth of SiGe film on Si Substrate using Solid Phase epitaxy
Yun, Sun-Jin, Kim, In-Soo,Bae, In-Ho,Cho, Kyoung-Ik,Lee, Jae-Jin,Nam, Kee-Soo 한국재료학회 1995 p.1093-1098
Choi, S.W., Lee, J.H.,Baek, J.H.,Han, W.S.,Lee, B.,Lee, E.H. 한국재료학회 1995 p.1099-1104
CRYSTALLINITY OF GaN EPILAYERS ON GaN BUFFER GROWN BY MOCVD
Lee, Cheul-Ro, Lee, In-hwan,Choi, In-hoon,Son, Sung-jin,Noh, Sam-kyu 한국재료학회 1995 p.1105-1109
OPTIMUM BUFFER STRUCTURE OF LOW-HIGH DOPED GaAs MESFET's GROWN BY MOLECULAR BEAM EPITAXY
Lee, Jae-Jin, Lee, Hae-Gwon,Hong, Sang-Ki,Hong, Song-Cheol,Lee, Jong-Lam,Pyun, Kwang-Eui 한국재료학회 1995 p.1111-1115
RECOMBINATION ENHANCED DEFECT REACOTIONS AND ROLE OF RED EMITTING LIGHT IN GaP LED'S DEGRADATION
Torchinskaya, T.V, Shcherbina, L.V 한국재료학회 1995 p.1117-1118