p/n PbSe 다이오드의 제조 및 전기적 특성 평가 = Fabrication and Electrical Characterization of p/n PbSe Diodes

다국어 초록 (Multilingual Abstract)

Lead selenide (PbSe) diodes were fabricated using a magnetron sputtering process system with apulsed DC power supply and a 2-inch PbSe target with a purity of 5N. For p-type PbSe thin films, the processvariable was the oxygen ratio in the mixed gas of argon and oxygen. The electrical characteristics of the thinfilms were observed after heat treatment. For the n-type PbSe, nickel (Ni) was used as a doping material.
The deposition and doping were performed simultaneously using a co-sputtering method. During cosputtering,the input power of the Ni sputter gun was adjusted as a process variable. Hall measurementexperiments were performed to measure the doping concentration and resistivity of both the p-type and ntypePbSe semiconducting films. The maximum doping concentration was 2.33×1019 cm-3 for p-type PbSe and7.55×1020 cm-3 for n-type PbSe thin films, respectively. The p-n junction IV curve showed that the lowestforward voltage generation point, Vf, was 1.5 V and the reverse breakdown voltage was -4.3 V. In thephotocurrent measurement, the photo sensitivities of the heat-treated samples were higher than that of thenon-treated sample, and the maximum value was 5.148. Photo responsivity was also higher in the heattreatedsamples. Its maximum was 0.7306 mA / W.