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In-clustering induced anomalous behavior of band gap in InAlN and InGaN
Gorczyca, I.; Suski, T.; Christensen, N. E.; Svane, A. John Wiley & Sons, Ltd 2010 p.1283-1286
Meissner effect of superconducting InN
Inushima, T.; Maude, D. K.; Muto, D.; Nanishi, Y. John Wiley & Sons, Ltd 2010 p.1287-1292
Surface photovoltage spectroscopy - method and applications
Cavalcoli, D.; Cavallini, A. John Wiley & Sons, Ltd 2010 p.1293-1300
The microstructure and properties of InN layers
Ruterana, P.; Syrkin, A. L.; Monroy, E.; Valcheva, E.; Kirilov, K. John Wiley & Sons, Ltd 2010 p.1301-1304
Electron microscopy of InGaN nanopillars spontaneously grown on Si(111) substrates
Kehagias, T.; Kerasiotis, I.; Vajpeyi, A. P.; Hausler, I.; Neumann, W.; Georgakilas, A.; Dimitrakopulos, G. P.; Komnninou, P. John Wiley & Sons, Ltd 2010 p.1305-1308
Recent advances in InN-based solar cells: status and challenges in InGaN and InAlN solar cells
Yamamoto, A.; Islam, M. R.; Kang, T. T.; Hashimoto, A. John Wiley & Sons, Ltd 2010 p.1309-1316
di Forte Poisson, M. A.; Sarazin, N.; Magis, M.; Tordjman, M.; Di Persio, J.; Langer, R.; Iliopoulos, E.; Georgakilas, A.; Kominou, P.; Guziewicz, M. John Wiley & Sons, Ltd 2010 p.1317-1324
TEM investigation of a processed InGaN based laser grown by PAMBE on bulk GaN substrate
Kret, S.; Ivaldi, F.; Zak, M.; Feduniewicz-Zmuda, A.; Siekacz, M.; Cywinski, G.; Skierbiszewski, C. John Wiley & Sons, Ltd 2010 p.1325-1328