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Micromagnetic properties of epitaxial MnAs films on GaAs surfaces
Hesjedal, T.; Engel-Herbert, R.; Schaadt, D. M.; Ploog, K. H. John Wiley & Sons, Ltd 2007 p.1585-1585
Room temperature Sb-based mid-infrared VCSELs
Genty, F.; Cerutti, L.; Garnache, A.; Ouvrard, A.; Perona, A.; Grech, P.; Romanini, D.; Chevrier, F. John Wiley & Sons, Ltd 2007 p.1591-1596
Barrier- and in-well pumped GaSb-based 2.3 m VECSELs
Wagner, J.; Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Manz, C.; Wild, C.; Kohler, K. John Wiley & Sons, Ltd 2007 p.1597-1600
Increased power conversion efficiency through photon recycling in quantum well lasers
Wang, J. B.; Zhang, Y. H. John Wiley & Sons, Ltd 2007 p.1601-1604
InGaN/GaN nanopillar-array light emitting diodes
Neufeld, C. J.; Schaake, C.; Grundmann, M.; Fichtenbaum, N. A.; Keller, S.; Mishra, U. K. John Wiley & Sons, Ltd 2007 p.1605-1608
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers
Liu, X. F.; Sun, G. S.; Li, J. M.; Ning, J.; Zhao, Y. M.; Luo, M. C.; Wang, L.; Zhao, W. S.; Zeng, Y. P. John Wiley & Sons, Ltd 2007 p.1609-1612
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
Wang, X.; Wang, X.; Wang, B.; Xiao, H.; Liu, H.; Wang, J.; Zeng, Y.; Li, J. John Wiley & Sons, Ltd 2007 p.1613-1616
Yi, J. C.; Cho, H. U. John Wiley & Sons, Ltd 2007 p.1617-1620
GaN/AlN electro-optical modulator prototype at telecommunication wavelengths
Baumann, E.; Giorgetta, F. R.; Hofstetter, D.; Guillot, F.; Leconte, S.; Bellet-Amalric, E.; Monroy, E. John Wiley & Sons, Ltd 2007 p.1621-1624
Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes
Chang, P. C.; Yu, C. L.; Liu, C. H.; Chang, S. J.; Su, Y. K.; Chuang, R. W.; Chiu, Y. J. John Wiley & Sons, Ltd 2007 p.1625-1628