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Preface: Phys. Status Solidi C 6/7
Nassiopoulou, A.; Canham, L.; Sailor, M.; Schmuki, P. John Wiley & Sons, Ltd 2009 p.1530-1532
Self-induced oscillation of the macropore diameter in n-type silicon
Cojocaru, A.; Carstensen, J.; Leisner, M.; Foll, H.; Tiginyanu, I. John Wiley & Sons, Ltd 2009 p.1533-1535
Bastide, S.; Quang, N. L.; Monna, R.; Levy-Clement, C. John Wiley & Sons, Ltd 2009 p.1536-1540
The effect of a biased conductive mask on porous silicon formation
Oisten, M. K.; Bergstrom, P. L. John Wiley & Sons, Ltd 2009 p.1541-1545
Infrared study of the oxidation of porous silicon: evidence of surface modes
Acquaroli, L. N.; Brondino, A.; Schmidt, J. A.; Arce, R. D.; Koropecki, R. R. John Wiley & Sons, Ltd 2009 p.1546-1550
Buried spongy-like layers in silicon implanted with He+, annealed and treated in D+ plasma
Misiuk, A.; Ulyashin, A.; Barcz, A.; Bak-Misiuk, J.; Romanowski, P.; Prujszczyk, M. John Wiley & Sons, Ltd 2009 p.1551-1556
Electron structure of porous silicon obtained without the use of HF acid
Kashkarov, V.; Nazarikov, I.; Lenshin, A.; Terekhov, V.; Turishchev, S.; Agapov, B.; Pankov, K.; Domashevskaya, E. John Wiley & Sons, Ltd 2009 p.1557-1560
Electrodeposition behavior of noble metals in ordered macroporous silicon
Matsumoto, T.; Kobayashi, K.; Fukami, K.; Sakka, T.; Ogata, Y. H. John Wiley & Sons, Ltd 2009 p.1561-1565