Si RFIC상의 온칩 수동소자에의 응용을 위한 주기적 접지 금속막 선로를 이용한 단파장 전송선로 개발

다국어 초록 (Multilingual Abstract)

In this study, highly miniaturized short-wavelength transmission line employing periodically perforated ground metal (PPGM) structures were developed for application to miniaturized on-chip passive component on Si RFIC. The transmission line employing PPGM structure showed shorter wavelength and lower characteristic impedance than conventional coplanar-type transmission line. The wavelength of the transmission line employing PPGM structure was 57% of the conventional coplanar-type transmission line on Si Radio Frequency Integrated Circuit (RFIC) substrate. Basic characteristics of the transmission line employing PPGM structure were also investigated in order to evaluate its suitability for application to a development of miniaturized passive on-chip components. According to the results, it was found that the PPGM structure is a promising candidate for application to a development of miniaturized on-chip passive components on Si RFIC.

참고문헌 (Reference)

1 A.A.Abidi, "RF-CMOS Comes of Age" E87-C (E87-C): 840-853, 2004

2 J.R.Long, "Passive Components for Silicon RF and MMIC Design" E86-C (E86-C): 1022-1031, 2003

3 D.M.Pozar, "Microwave engineering" Addison-wesley 1990

4 Y. Yun, "Basic RF Characteristics of the Microstrip Line Employing Periodically Perforated Ground Metal and Its Application to Highly Minia- turized On-Hip Passive Components on GaAs MMIC" 54 : 3805-3817, 2006

5 Y. Yun, "A Novel Microstrip-Line Structure Employing a Periodically Perforated Ground Metal and Its Application to Highly Miniaturized and Low-Impedance Passive Components Fabricated on GaAs MMIC" 53 : 1951-1959, 2005

6 Y.Yun, "A Fully-integrated broadband amplifier MMIC employing a novel chip size package" 2930-2937, 2002