The GaN layers were grown on(100) GaAs substrates and doped with silicon as n-type dopants. Photoluminescence(PL) measurement shows single emission as representing free hole to donor recombination. The spectrum for the zinc-blende GaN is shifted by ab...
The GaN layers were grown on(100) GaAs substrates and doped with silicon as n-type dopants. Photoluminescence(PL) measurement shows single emission as representing free hole to donor recombination. The spectrum for the zinc-blende GaN is shifted by about 200meV to lower energy with respect to the wurtzite spectrum, which is consistent with the reduced band gap in zinc-blende GaN. The electrical contact properties of the metal/GaN was investigated using the I-V, C-V characteristics. The results of the I-V measurement for the all contacts on GaN show nonlinear shapes. The AFM measurements have also been carried out for GaN/GaAs surface in order to the measurement of morphology.