RF 스퍼터링법에 의한 SCT 박막의 기판온도 영향 = Influence of Substrate Temperature of SCT Thin Film by RF Sputtering Method

다국어 초록 (Multilingual Abstract)

The (Sr0.9Ca0.1)TiO3(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[Å/min]. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of 100～500[℃]. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of -80～＋90[℃]. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases

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