<P>This paper presents a high-efficiency broadband envelope-tracking power amplifier with operation at carrier frequencies from 500 to 1750 MHz. The RF power amplifier (RFPA) is provided by a single-chip gallium-nitride (GaN) integrated circuit ...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107670685
2012
-
SCOPUS,SCIE
학술저널
2298-2308(11쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>This paper presents a high-efficiency broadband envelope-tracking power amplifier with operation at carrier frequencies from 500 to 1750 MHz. The RF power amplifier (RFPA) is provided by a single-chip gallium-nitride (GaN) integrated circuit ...
<P>This paper presents a high-efficiency broadband envelope-tracking power amplifier with operation at carrier frequencies from 500 to 1750 MHz. The RF power amplifier (RFPA) is provided by a single-chip gallium-nitride (GaN) integrated circuit (IC) whose design included a broadband output match achieved by operating directly into a load resistance of 50 Ω and broadband input match achieved using a feedback network. Under single-tone excitation, the Class-AB GaN PA IC provides output power above 12 W with greater than 50% drain efficiency and more than 10-dB gain at 40-V drain bias. When placed in envelope tracking configuration, using a representative WCDMA modulated signal with 4-MHz bandwidth and 6.6-dB peak-to-average power ratio, the ET PA achieved 4 W of average output power at its peak average drain efficiency of 31% at 752 MHz (including the power dissipation of the envelope modulator). The RFPA individually was measured to have an average drain efficiency of 58.5% for the WCDMA signal. Across the 500-1750-MHz band, using the WCDMA signal, greater than 25% average drain efficiency with more than 10 dB of gain was measured.</P>