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다국어 초록 (Multilingual Abstract)

In this paper, we present the radiofrequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-㎚ channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 ㎔. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of Y₂₂-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.

목차 (Table of Contents)

Abstract
Ⅰ. INTRODUCTION
Ⅱ. SIMULATION AND SMALL-SIGNAL MODELING
Ⅲ. CONCLUSIONS
ACKNOWLEDGMENTS

Abstract
Ⅰ. INTRODUCTION
Ⅱ. SIMULATION AND SMALL-SIGNAL MODELING
Ⅲ. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES

참고문헌 (Reference)

1 M. Kang, "Separate extraction of gate resistance componentsin RF MOSFETs" 54 (54): 1459-1463, 2007

2 J.-P. Colinge, "Reduced electric field in junctionless transistors" 96 (96): 073510-1-073510-3, 2010

3 S. Cho, K. R. Kim, B. -G. Park, and I. M. Kang, "RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs" IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 58 (58): 1388-1396, 2011

4 C.-W. Lee, "Low subthreshold slope in junctionless multigate transistors" 96 (96): 102106-1-102101-3, 2010

5 C.-W. Lee, "Junctionless multigate field-effect transistor" 94 (94): 053511-, 2009

6 C.-W. Lee, "High-temperature performance of silicon junctionless MOSFETs" 57 (57): 620-625, 2010

7 Ju-Young Kim, "Accuracy Analysis of Extraction Methods for Effective Channel Length in Deep-Submicron MOSFETs" 대한전자공학회 11 (11): 129-133, 2011

8 E. Torres-Rios, "A method to determine the gate bias-dependent and gate biasindependent components of MOSFET series resistance from S-parameter" 53 (53): 571-573, 2006

1 M. Kang, "Separate extraction of gate resistance componentsin RF MOSFETs" 54 (54): 1459-1463, 2007

2 J.-P. Colinge, "Reduced electric field in junctionless transistors" 96 (96): 073510-1-073510-3, 2010

4 C.-W. Lee, "Low subthreshold slope in junctionless multigate transistors" 96 (96): 102106-1-102101-3, 2010

5 C.-W. Lee, "Junctionless multigate field-effect transistor" 94 (94): 053511-, 2009

6 C.-W. Lee, "High-temperature performance of silicon junctionless MOSFETs" 57 (57): 620-625, 2010

7 Ju-Young Kim, "Accuracy Analysis of Extraction Methods for Effective Channel Length in Deep-Submicron MOSFETs" 대한전자공학회 11 (11): 129-133, 2011

8 E. Torres-Rios, "A method to determine the gate bias-dependent and gate biasindependent components of MOSFET series resistance from S-parameter" 53 (53): 571-573, 2006

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연월일	이력구분	이력상세
2023	평가예정	해외DB학술지평가 신청대상 (해외등재 학술지 평가)
2020-01-01	평가	등재학술지 유지 (해외등재 학술지 평가)
2014-01-21	학회명변경	영문명 : The Institute Of Electronics Engineers Of Korea -> The Institute of Electronics and Information Engineers
2010-11-25	학술지명변경	한글명 : JOURNAL OF SEMICONDUTOR TECHNOLOGY AND SCIENCE -> JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2010-01-01	평가	등재학술지 선정 (등재후보2차)
2009-01-01	평가	등재후보 1차 PASS (등재후보1차)
2007-01-01	평가	등재후보학술지 선정 (신규평가)