Stress Analysis Using Finite Element Modeling of a Novel RF Microelectromechanical System Shunt Switch Designed on Quartz Substrate for Low-voltage Applications

다국어 초록 (Multilingual Abstract)

This paper presents a novel shunt radio frequency microelectromechanical system switch on a quartz substrate with stiff ribs around the membrane. The buckling effects in the switch membrane and stiction problem are the primary concerns with RF MEMS switches. These effects can be reduced by the proposed design approach due to the stiffness of the ribs around the membrane. A lower mass of the beam and a reduction in the squeeze film damping is achieved due to the slots and holes in the membrane, which further aid in attaining high switching speeds. The proposed switch is optimized to operate in the k-band, which results in a high isolation of -40 dB and low insertion loss of -0.047dB at 21 GHz, with a low actuation voltage of only 14.6 V needed for the operation the switch. The membrane does not bend with this membrane design approach. Finite element modeling is used to analyze the stress and pull-in voltage.

참고문헌 (Reference)

1 K. E. Peterson, 23 : 376-, 1979

2 C. T. Nguyen, Center for Integrated Sensors & Circuits, Michigan Univ 1-, 1998

3 C. L. Goldsmith, 15 : 718-, 2005

4 J. B. Muldavin, 48 : 1053-, 2000

5 Z. J. Yao, 8 : 129-, 1999

6 S. P. Pacheco, Radiat.Lab., Michigan Univ 165-, 2000

7 M. Ruan, Dept. of Electr. Eng., Arizona State Univ 224-, 2001

8 H. C. Lee, 15 : 2098-, 2005

9 M. Daneshmand, Microwave to Millimeter-wave Lab., Univ. of Alberta 1217-, 2009

10 W. M. V. Spenger, 17 : 563-, 2003

11 L. A. Rocha, Nano Science and Tech. Inst 203-, 2004

12 M. F. Badia, 21 : 1229-, 2012

13 J. B. Muldavin, 48 : 1045-, 2000

14 L. X. Zhang, 9 : 420-, 2003

15 G. Wang, "RF MEMS switches with novel materials nd micromachining techniques for SOC/SOP RF front ends" Georgia Institute of Technology 2006

16 G. M. Rebeiz, "RF MEMS Theory, Design and Technology" John Wiley & Sons 2003