RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      KCI등재

      푸리에변환 적외선분광분석법에 의한 누설전류의 발생 원인에 대한 연구 = Study on the Generation of Leakage Current by the Fourier Transform Infrared Analysis

      한글로보기

      https://www.riss.kr/link?id=A101056011

      • 0

        상세조회
      • 0

        다운로드
      서지정보 열기
      • 내보내기
      • 내책장담기
      • 공유하기
      • 오류접수

      부가정보

      다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

      The surfaces of $SiO_2$ films were treated by PMMA diluted solutions, and analyzed the chemical shift from Fourier Transform Infrared Spectrometer. The $SiO_2$ film treated by PMMA diluted solution changed the properties of the surface, and showed the blue and red shift according to the concentration of PMMA. The C-H bond elongation effect due to the high electro-negative atom chlorine showed the red shift, and makes the final material with the cross-link structure. The leakage current was efficiently reduced at the sample No 7 with the red shift, witch depends on the electron deficient group.
      번역하기

      The surfaces of $SiO_2$ films were treated by PMMA diluted solutions, and analyzed the chemical shift from Fourier Transform Infrared Spectrometer. The $SiO_2$ film treated by PMMA diluted solution changed the properties of the surface, and showed the...

      The surfaces of $SiO_2$ films were treated by PMMA diluted solutions, and analyzed the chemical shift from Fourier Transform Infrared Spectrometer. The $SiO_2$ film treated by PMMA diluted solution changed the properties of the surface, and showed the blue and red shift according to the concentration of PMMA. The C-H bond elongation effect due to the high electro-negative atom chlorine showed the red shift, and makes the final material with the cross-link structure. The leakage current was efficiently reduced at the sample No 7 with the red shift, witch depends on the electron deficient group.

      더보기

      참고문헌 (Reference)

      1 강만구, "플렉시블 염료감응 대양전지 기술" 19 (19): 39-, 2006

      2 김중연, "플라즈마 조건 변화에 따른 ITO 특성 분석 및유기발광소자의 제작에 관한 연구" 한국전기전자재료학회 18 (18): 941-944, 2005

      3 M. J. Kellicutt, "Variable-range-hopping conduction and the Pool-Frankel effect in a copper polyaniline vermiculite intercalation compound" 47 (47): 13664-, 1993

      4 T. C. Chang, "The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment" 146 : 3802-, 1999

      5 A. Grill, "Structure of low dielectric constant to extreme low dielectric constant SIOCH films: Fourier transform infrared spectroscopy characteri- zation" 94 : 6697-, 2003

      6 G. Galli, "Structural and electronic properties of amorphous carbon" 62 (62): 555-, 1989

      7 P. Masri, "Silicon carbide and silicon carbide- based structures: The physics of epitaxy" 48 : 1-, 2002

      8 P. R. Emtage, "Schottky emission through thin inslulating films" 8 (8): 267-, 1962

      9 J. G. Simmons, "Pools-frenkel effect and schottky in metal-insuloror-metal systems" 155 : 657-, 1967

      10 T. Oh, "Pentacene thin film trasnsistors on PMMA treated SiO2" 7 (7): 639-, 2006

      1 강만구, "플렉시블 염료감응 대양전지 기술" 19 (19): 39-, 2006

      2 김중연, "플라즈마 조건 변화에 따른 ITO 특성 분석 및유기발광소자의 제작에 관한 연구" 한국전기전자재료학회 18 (18): 941-944, 2005

      3 M. J. Kellicutt, "Variable-range-hopping conduction and the Pool-Frankel effect in a copper polyaniline vermiculite intercalation compound" 47 (47): 13664-, 1993

      4 T. C. Chang, "The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment" 146 : 3802-, 1999

      5 A. Grill, "Structure of low dielectric constant to extreme low dielectric constant SIOCH films: Fourier transform infrared spectroscopy characteri- zation" 94 : 6697-, 2003

      6 G. Galli, "Structural and electronic properties of amorphous carbon" 62 (62): 555-, 1989

      7 P. Masri, "Silicon carbide and silicon carbide- based structures: The physics of epitaxy" 48 : 1-, 2002

      8 P. R. Emtage, "Schottky emission through thin inslulating films" 8 (8): 267-, 1962

      9 J. G. Simmons, "Pools-frenkel effect and schottky in metal-insuloror-metal systems" 155 : 657-, 1967

      10 T. Oh, "Pentacene thin film trasnsistors on PMMA treated SiO2" 7 (7): 639-, 2006

      11 D. J. Gundlach, "Pentacene organic thin-film transistors-molecular ordering and mobility" 18 : 87-, 1997

      12 J. Y. Kim, "Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition" 90 : 2469-, 2001

      13 T. Oh, "Organic thin film transistors using pentacene and SiOC film" 5 : 23-, 2006

      14 J. Frenkel, "On pre-breakdown phenomena in insulators and electronic semiconductors" 54 : 647-, 1938

      15 J. R. Kalnin, "Modified maxwell-garnett equation for the effective transport coefficients in inhomogeneous media" 31 : 7227-, 1998

      16 I. Kymissis, "High-performance bottom electrode organic thin-film transistors" 48 : 1060-, 2001

      17 M. A. Tamor, "Graphitic network models of diamondlike carbon" 67 : 1007-, 1990

      18 T. Oh, "Generation of bonding structure due to organic carbon and organometallic carbon as a function of Gas source" 44 : 4103-, 2005

      19 P. W. May, "Field emission conduction mechanisms in chemical vapor deposited diamond and diamondlike carbon films" 27 : 2182-, 1998

      20 C. A. Mead, "Electron transport mechanism in thin insulating films" 128 : 2088-, 1962

      21 J.-H. Yun, "Effect of post-treatments on atomic layer deposition of TiN thin films using tetrakis (dimethylamido) titanium and ammonia" 41 : L418-, 2002

      더보기

      동일학술지(권/호) 다른 논문

      동일학술지 더보기

      더보기

      분석정보

      View

      상세정보조회

      0

      Usage

      원문다운로드

      0

      대출신청

      0

      복사신청

      0

      EDDS신청

      0

      동일 주제 내 활용도 TOP

      더보기

      주제

      연도별 연구동향

      연도별 활용동향

      연관논문

      연구자 네트워크맵

      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

      인용정보 인용지수 설명보기

      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2026 평가예정 재인증평가 신청대상 (재인증)
      2020-01-01 평가 등재학술지 유지 (재인증) KCI등재
      2017-01-01 평가 등재학술지 유지 (계속평가) KCI등재
      2013-01-01 평가 등재 1차 FAIL (등재유지) KCI등재
      2010-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2008-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2006-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2005-05-30 학회명변경 영문명 : 미등록 -> The Korean Institute of Electrical and Electronic Material Engineers KCI등재
      2004-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2001-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      1998-07-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
      더보기

      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.13 0.13 0.13
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.14 0.14 0.247 0.06
      더보기

      이 자료와 함께 이용한 RISS 자료

      나만을 위한 추천자료

      해외이동버튼