ReMnO3(Re:Y, Ho, Er) thin films were prepared by MOCVD method available to non-volatile memory device with MFS-FET structure. ReMnO3 thin films were deposited on the Si(100) substrate at 700℃ for 2h. When the films were post-annealed at 900℃ for 1...
ReMnO3(Re:Y, Ho, Er) thin films were prepared by MOCVD method available to non-volatile memory device with MFS-FET structure. ReMnO3 thin films were deposited on the Si(100) substrate at 700℃ for 2h. When the films were post-annealed at 900℃ for 1h in air, the single phase of hexagonal ReMnO3 thin films were detected. Ferroelectric properties of ReMnO3 thin films were dependent on the degree of c-axis orientation in the single phase of hexagonal structure, and remnant polarization (Pr) of YMnO3 thin films with high degree of c-axis orientation was 105 nC/cm2. Leakage current density was dependent on the grain size of microstructure, and that of YMnO3 thin films with grain size of 100~150 nm was 10-8 A/cm2 at applied voltage of 0.5V.