Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 &mu...
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https://www.riss.kr/link?id=A107757653
2011
-
KCI등재,SCOPUS,SCIE
학술저널
1015-1019(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 &mu...
Here, we report scaling effects on the electrical properties of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFTs had same channel width/length ratio (W/L = 20), but different channel lengths (L = 20, 10, 5, and 2.5 μm). To examine the scaling-down behaviors, short-channel effects and contact resistance of the TFTs were investigated. As the channel length decreased, apparent shift of threshold voltage (V<SUB>th</SUB>) and degradation of subthreshold swing (S<SUB>SUB</SUB>) were shown. In addition, it is also found that the field-effect mobility (μ<SUB>FE</SUB>) was degraded as the channel length was decreased which was originated from contact resistance. Due to this contact resistance effect, drain current (I<SUB>DS</SUB>) was decreased for short-channel devices.
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