Aligned Cusp 자장이 인가된 초크랄스키 실리콘 단결정 성장에서의 유동장에 대한 수치적 모사 = A Numerical Simulayion of Czochralski Flow Field for Single Crystal Growth of Silicon with Aligned Cu

다국어 초록 (Multilingual Abstract)

Characteristics of melt flow in Czochralski crystal growth of silicon have been simulated numerically under the influence of an aligned magnetic field. Since the silicon melt in a crucible for crystal growth is of high temperature and highly electrical-conducting, experimentation method has difficulty in analyzing the behavior of the melt flow Navier-Stokes and Maxwell equations have been used for the modeling of the melt flow which can be regarded as a liquid metal, and under-relaxation has been adopted In the calculation procedure of the set of simultaneous nonlinear equations. Together with the melt flow which forms the Marangoni convection that comes from the inside the flow field, a flow circulation is observed near the comer close both to the crucible wall and the free surface. In the flow field where magnetic field is not uniform, due the rotation of the crucible wall, differentiated centrifugal forces are exerted for different positions in the flow field, which yields the flow circulation. Also, the fact that the melt flow tends to follow the magnetic lines instead of traversing the lines helps the flow circulation exist.

목차 (Table of Contents)

• 1.서론
• 2.문제설정 및 수치계산
• 3.결과 및 고찰
• 4.결론