RF 마그네트론 스퍼터링 공정으로 PET 기판 위에 제조한 Ga-doped ZnO 투명전도막의 특성 = Properties of Ga-doped ZnO transparent conducting oxide fabricated on PET substrate by RF magnetron sputtering

다국어 초록 (Multilingual Abstract)

The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PET substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 600 sec in $O_2$ plasma pretreatment process, the resistivity of GZO films on the PET substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

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