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Are we at the End of CMOS Scaling?
Shahidi, G. G. New Jersey; World Scientific; 2006.; London : 2006 p.3-8
3D Size Effects in Advanced SOI Devices
Cristoloveanu, S.; Ritzenthaler, R.; Ohata, A.; Faynot, O. New Jersey; World Scientific; 2006.; London : 2006 p.9-30
Chang, C.-Y. New Jersey; World Scientific; 2006.; London : 2006 p.31-42
Challenges For Future Semiconductor Manufacturing
Iwai, H.; Kakushima, K.; Wong, H. New Jersey; World Scientific; 2006.; London : 2006 p.43-82
Nanoelectronics - Opportunities and Challenges
Wong, H.-S. P. New Jersey; World Scientific; 2006.; London : 2006 p.83-94
Asymmetric Tunneling Source MOSFETS: A Novel Device Solution for Sub-100nm CMOS Technology
Girish, N. V.; Jhaveri, R.; Woo, J. C. S. New Jersey; World Scientific; 2006.; London : 2006 p.95-102
Analysis of the Effects of Strain in Ultra-Thin SOI MOS Devices
Barin, N.; Fiegna, C.; Sangiorgi, E. New Jersey; World Scientific; 2006.; London : 2006 p.105-114
Device Simulation Demands of Upcoming Microelectronics Devices
Kosina, H.; Selberherr, S. New Jersey; World Scientific; 2006.; London : 2006 p.115-136
SON (Silicon On Nothing) Platform for ULSI Era: Technology & Devices
Skotnicki, T.; Monfray, S.; Chanemougame, D.; Coronel, P.; Harrison, S.; Dutartre, D.; Talbot, A.; Fenouillet-Beranger, C.; Borel, S. New Jersey; World Scientific; 2006.; London : 2006 p.137-146
Highly Scaled CMOS Device Technologies with New Structures and New Materials
Wang, Y. Y.; Huang, R.; Kang, J.; Zhang, S. New Jersey; World Scientific; 2006.; London : 2006 p.147-174