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      Design of Main Body and Edge Termination of 100 V Class Super-junction Trench MOSFET

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      https://www.riss.kr/link?id=A105923614

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      다국어 초록 (Multilingual Abstract)

      For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of 0.96 mΩ-㎠ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.
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      For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, ...

      For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of 0.96 mΩ-㎠ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

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      목차 (Table of Contents)

      • Abstract
      • Ⅰ. Introduction
      • Ⅱ. Main body for SJ TMOSFET
      • Ⅲ. Edge Termination for SJ TMOSFET
      • Ⅳ. Conclusion
      • Abstract
      • Ⅰ. Introduction
      • Ⅱ. Main body for SJ TMOSFET
      • Ⅲ. Edge Termination for SJ TMOSFET
      • Ⅳ. Conclusion
      • References
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