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다국어 초록 (Multilingual Abstract)

To study the effect of aggregation of the 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) molecule in solid state, thin films of PBD have been prepared by the thermal evaporation technique onto glass and quartz substrates under different experimental conditions. These films have been studied for their structural, optical and electrical properties. AFM investigations of the films revealed that the films were smooth, dense and crack free with RMS roughness of 11-14 nm. XRD measurements indicate that films deposited on quartz are more crystalline than films deposited on glass substrate. Both absorption and reflectance spectra over the wavelength range 200 -800 nm have been recorded to find optical parameters, namely, absorption, extinction coefficient, refractive index and dielectric constants. The inter-band transition energies are found to lie within the range 3.45-3.49 eV. Optical studies of the films indicate that PBD molecules preferred J-aggregation.
A prominent single emission peak in the range of 370-390 nm has been observed which confirms that the fluorescent property of this molecule is not quenched in the thin film state. The electrical conductivity results for the evaporated films exhibited semiconductor behaviour within the investigated field and temperature range.
The nature of the substrate is found to be a useful tool to modify the film morphology and for enhancing the charge transport within the films.

참고문헌 (Reference)

1 U. Mitschke, 10 : 1471-, 2000

2 B. Schulz, 9 : 601-, 1997

3 M. H. Shin, 18 : 212-, 2007

4 J. Bettenhausen, 82 : 4957-, 1997

5 M. Guan, 21 : 2708-, 2003

6 G. Hughes, 15 : 94-, 2005

7 Y. C. Zhu, 72 : 414-, 2009

8 C. Adachi, 55 : 1489-, 1989

9 Z. Lu, 84 : 1287-, 2010

10 V. N. Salimgareeva, 76 : 1655-, 2003

1 U. Mitschke, 10 : 1471-, 2000

2 B. Schulz, 9 : 601-, 1997

3 M. H. Shin, 18 : 212-, 2007

4 J. Bettenhausen, 82 : 4957-, 1997

5 M. Guan, 21 : 2708-, 2003

6 G. Hughes, 15 : 94-, 2005

7 Y. C. Zhu, 72 : 414-, 2009

8 C. Adachi, 55 : 1489-, 1989

9 Z. Lu, 84 : 1287-, 2010

10 V. N. Salimgareeva, 76 : 1655-, 2003

11 P. K. Paul, 128 : 41-, 2008

12 L. S. Birks, 16 : 687-, 1946

13 G. K. Williamson, 1 : 22-, 1953

14 K. Khun Khun, 257 : 2929-, 2011

15 K. B. Kim, 708 : 2002

16 S. Kim, 21 : 1616-, 2011

17 J. H. Choi, 159 : 15-, 2009

18 S. Paek, 504 : 52-, 2009

19 S. Kirstein, 40 : 129-, 2000

20 G. Hughes, 15 : 94-, 2005

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연월일	이력구분	이력상세
	학술지등록	한글명 : Electronic Materials Letters 외국어명 : Electronic Materials Letters
2023	평가예정	해외DB학술지평가 신청대상 (해외등재 학술지 평가)
2020-01-01	평가	등재학술지 유지 (해외등재 학술지 평가)
2013-10-01	평가	등재학술지 선정 (기타)
2011-01-01	평가	등재후보학술지 유지 (기타)
2009-12-29	학회명변경	한글명 : 대한금속ㆍ재료학회 -> 대한금속·재료학회
2008-01-01	평가	SCIE 등재 (신규평가)