Effect of alumina addition on the microstructure and grain boundary resistance of magnesia partially-stabilized zirconia

다국어 초록 (Multilingual Abstract)

The electrical properties of 9 mol% MgOeZrO2 (Mg-PSZ) with 1 mol% Al2O3 and the mechanisms for electrical degradation were investigated using structural, morphological, and electrochemical analyses.
The addition of Al2O3 caused an increase in both the monoclinic and the Mg-rich phases at the grain boundaries in the Mg-PSZ. Coarse grains larger than 20 mm and an intergranular layer composed of the Mg-rich phase were identified in a specimen sintered at 1600 C. This specimen exhibited a minimum of ionic conductivity (4.98 104 S cm1 at 700 C) due to the grain boundary resistance (245 U cm2), which dominated the overall resistance. A similar trend was observed over the entire temperature range (600e1500 C). An intergranular siliceous impurity (SiO2) was present in conjunction with the Mg-rich phase. This impurity and the Mg-rich phase acted as a barrier layer for oxygen ion diffusion. The presence of the intergranular phases (i.e. the monoclinic and Mg-rich phases) contributed to the degradation of the ionic conductivity in Mg-PSZ with an Al2O3 addition.

참고문헌 (Reference)

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