Investigation on operation robustness of p-type low-temperature polycrystalline silicon thin-film transistor-based micro light-emitting diode pixel circuit using pulse width modulation under component fluctuation

다국어 초록 (Multilingual Abstract)

In this study, we have investigated the operation robustness of a p-type low-temperature polycrystallinesilicon (LTPS) thin-film transistor (TFT)-based micro light-emitting diode (μLED) pixel circuitadopting pulse width modulation (PWM) under circuit component fluctuations. The wavelengthshift of μLEDs, depending on the current density, was suppressed by implementing PWM. The PWMpixel circuit controlled the emission time with constant μLED current in the simulated and measuredresults. In addition, the wavelength shift was suppressed below 0.48% within the 10-bit grayscalerange. Furthermore, the component tolerance of the pixel circuit was investigated by simulating theerror rate of μLED emission time with varying threshold voltage, mobility, subthreshold swing, andcapacitance. The pixel circuit exhibited a robust operation with a maximum error rate of 4.0% under acomponent fluctuation of±10%. Consequently, the μLED pixel circuit adoptingPWMsuppressed thewavelength shift of μLEDs and demonstrated robust circuit operation under component fluctuation.

참고문헌 (Reference)

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