RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      GCPW와 TE₀₁δ 모드 유전체 공진기 사이의 결합을 이용한 10 GHz FET DRO

      한글로보기

      https://www.riss.kr/link?id=A82692392

      • 0

        상세조회
      • 0

        다운로드
      서지정보 열기
      • 내보내기
      • 내책장담기
      • 공유하기
      • 오류접수

      부가정보

      다국어 초록 (Multilingual Abstract)

      In this paper, four sets of GCPW (Grounded Coplanar Waveguide) FET DROs and four sets of microstrip FET DROs based on the series feedback configuration at 10 GHz have been designed, realized, and compared. The GCPW DROs have been designed and fabricated based on coupling between a TE… mode dielectric resonator and a uniform GCPW line[10]. Based on identical FETs and dielectric substrate, the four sets of GCPW FET DROs have been compared with four sets of the microstrip FET DROs, in terms of output power and phase noise under the identical bias condition. The GCPW DROs always show better phase noise characteristic. However, for output power characteristic we cannot directly compare the GCPW FET DROs with the micorstrip DROs since only two GCPW FET DROs show higher output power than that of the microstrip FETDROs.
      번역하기

      In this paper, four sets of GCPW (Grounded Coplanar Waveguide) FET DROs and four sets of microstrip FET DROs based on the series feedback configuration at 10 GHz have been designed, realized, and compared. The GCPW DROs have been designed and fabricat...

      In this paper, four sets of GCPW (Grounded Coplanar Waveguide) FET DROs and four sets of microstrip FET DROs based on the series feedback configuration at 10 GHz have been designed, realized, and compared. The GCPW DROs have been designed and fabricated based on coupling between a TE… mode dielectric resonator and a uniform GCPW line[10]. Based on identical FETs and dielectric substrate, the four sets of GCPW FET DROs have been compared with four sets of the microstrip FET DROs, in terms of output power and phase noise under the identical bias condition. The GCPW DROs always show better phase noise characteristic. However, for output power characteristic we cannot directly compare the GCPW FET DROs with the micorstrip DROs since only two GCPW FET DROs show higher output power than that of the microstrip FETDROs.

      더보기

      목차 (Table of Contents)

      • Ⅰ . 서론 1
      • Ⅱ. 회로 구조 2
      • Ⅲ. 실험 결과 3
      • Ⅳ. 결론 4
      • Ⅰ . 서론 1
      • Ⅱ. 회로 구조 2
      • Ⅲ. 실험 결과 3
      • Ⅳ. 결론 4
      더보기

      분석정보

      View

      상세정보조회

      0

      Usage

      원문다운로드

      0

      대출신청

      0

      복사신청

      0

      EDDS신청

      0

      동일 주제 내 활용도 TOP

      더보기

      주제

      연도별 연구동향

      연도별 활용동향

      연관논문

      연구자 네트워크맵

      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

      이 자료와 함께 이용한 RISS 자료

      나만을 위한 추천자료

      해외이동버튼