기판온도 및 산소 분위기 가스에 따른 IGZO 투명전도성박막의 구조적 및 전기적 특성 = Effect of Substrate Temperature and Oxygen Ambient Gases on the Structural and Electrical Characteristics of IGZO Thin Films

다국어 초록 (Multilingual Abstract)

We have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300oC with various O2 flow rate. Experiments were carried out while varying the oxygen gas flow rate from 0sccm to 1.0sccm to see how the oxygen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300oC showed amorphous. The lowest resistivity value was 2125x10-3 Ωcm when the IGZO film was deposited at RT and set up at 0.1sccm. As the oxygen vacancy rate decreased, the resistivity intended to increase. In conclusion, Oxygen vacancy affects the IGZO thin film’s electrical characteristic.

참고문헌 (Reference)

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