In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it ...
In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that final polishing is very important.
Polishing one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers.
This study will report the evaluation on abrasion of wafer according to variety processing condition, which have major influence on the abrasion and surface defect of Si wafer polishing, were adapted to polishing pressure, machining speed, and the slurry mix ratio. Thus the optimum condition selection of ultra precision Si wafer polishing using load cell and infrared temperature sensor. To evaluate each machining factor, use a data through each sensor. That evaluation of abrasion according to variety condition is selected to use a result data that measure a pressure, machining speed, and the processing time. And optimum condition is selected by this result. By using optimum condition, it achieve a ultra precision mirror like surface.