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      Fabrication TiN/BaTiO₃ Thin Film by RF Sputtering and Characteristics of Photon Energy

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      https://www.riss.kr/link?id=A40058099

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      다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

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      This study evaporates the thickness of BaTiO₃differently by RF sputtering on Si wafer with N-Type 100 direction of substrate and manufactures BaTiO₃/TiN structure evaporating TiN for diffusion barrier on it.
      ε1 has larger value initially as the thickness is thicker, but it is decreased as the photon energy is increased and in ε2 value, as the thickness is thicker, TIN with middle dielectric layer has large value and thin film which TIN is not evaporated is decreased.
      In permittivity of thin film which evaporates TIN film on the upper part of BaTiO₃thin film according to the increase of photon energy, ε1 of real number has large value and ε2 of imaginary number has small value as the thickness is thinner.
      Therefore, when TIN thin film is evaporated on BaTiO₃, it obtains better photon energy property than the case that Tin is not evaporated and it is expected that good reproduction is resulted in applying to optical element.
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      This study evaporates the thickness of BaTiO₃differently by RF sputtering on Si wafer with N-Type 100 direction of substrate and manufactures BaTiO₃/TiN structure evaporating TiN for diffusion barrier on it. ε1 has larger value initially as the ...

      This study evaporates the thickness of BaTiO₃differently by RF sputtering on Si wafer with N-Type 100 direction of substrate and manufactures BaTiO₃/TiN structure evaporating TiN for diffusion barrier on it.
      ε1 has larger value initially as the thickness is thicker, but it is decreased as the photon energy is increased and in ε2 value, as the thickness is thicker, TIN with middle dielectric layer has large value and thin film which TIN is not evaporated is decreased.
      In permittivity of thin film which evaporates TIN film on the upper part of BaTiO₃thin film according to the increase of photon energy, ε1 of real number has large value and ε2 of imaginary number has small value as the thickness is thinner.
      Therefore, when TIN thin film is evaporated on BaTiO₃, it obtains better photon energy property than the case that Tin is not evaporated and it is expected that good reproduction is resulted in applying to optical element.

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