Bridgman 법에 의한 금속급 다결정 Si 의 결정성장 및 특성평가에 관한 연구 = Crystal Growth and Characterization of Metallurgical-grade Polycrystalline Silicon by the Bridgman Method

다국어 초록 (Multilingual Abstract)

Metallurgical-grade polycrystalline silicon was directionally solidified at growth rates of 0.2∼1.0㎜/min by using split type, reusable graphite molds which were coated with Si₃N₄powder. The resultant grain sizes of the silicon ingots and the shapes of the solid/liquid(S/L) interfaces were investigated. X-ray diffraction was used to determine the preferred orientation in each of the silicon ingots. The impurity content of the silicon was analyzed and the resistivities of the ingots were measured. During the growth of an ingot, the shape of the S/L interface was concave to the silicon melt, and the resistivity decreased. The presence of Al which can be acting as a carrier, is thought to be the main factor causing such a decrease in resistivity. When a growth rate of 0.2㎜/min was used, the preferred orientation was found to be (111).