고주파용 칩인덕터 유리소재 개발 = Development of Glass Ceramics for High Frequency Chip-Inductor

다국어 초록 (Multilingual Abstract)

The glass systems of SiO_2-Al_2O_3-B_2O_3-K_2O were fabricated with the composition of SiO_2 65∼76wt%, B_2O_3 20∼30wt%, Al_2O_3 0.3∼4.5wt%, and K_2O 0.5∼2.5wt% for mother glass of high frequency chip inductor. The glasses were prepared by quenching the melt from 1500℃ and analyzed by X-ray diffraction. The specimens were prepared with composites of ball milled glasses powder mixed with 0∼50wt% of alumina powder. After heat treating at 850℃∼950℃, sintering behaviors were observed by measuring the density of specimens as a function of temperature and the amount of alumina. Dielectric constants and dissipation factors were evaluated with HP-4192A as well as other crucial properties such as strength, softening point and thermal expansion. The density, dielectric constant and dissipation factor of specimen were 2.61g/㎟, 5.9∼6.2 and 0.0013∼0.0016 at 1㎒, respectively.