Noise Properties of Coherent Tunneling Processes in Resonant Interband Tunneling Diode

다국어 초록 (Multilingual Abstract)

Tunneling noise properties were studied with SiGe resonant interband tunneling diodes (RITDs). The classification of sub- and super-Poissonian processes was evaluated through a study of the shot noise. Shot noise suppression and the signatures of coherent transport were observed in the
negative differential resistance (NDR) region by using the cross-correlation measurement technique. The temperature dependent transport behaviors are discussed.

다국어 초록 (Multilingual Abstract)

Tunneling noise properties were studied with SiGe resonant interband tunneling diodes (RITDs). The classification of sub- and super-Poissonian processes was evaluated through a study of the shot noise. Shot noise suppression and the signatures of coherent transport were observed in the
negative differential resistance (NDR) region by using the cross-correlation measurement technique. The temperature dependent transport behaviors are discussed.

참고문헌 (Reference)

1 C. W. J. Beenakker, 46 : 1889-, 1992

2 A. K. M. Newaz, 71 : 195303-, 2005

3 A. G. Chynoweth, 125 : 877-, 1962

4 V. Nam Do, 100 : 093705-, 2006

5 V. Y. Aleshkin, 73 : 165320-, 2006

6 Ya. M. Blanter, 336 : 1-, 2000

7 L. Esaki, 109 : 603-, 1958

8 U. Auer, 22 : 215-, 2001

9 S. Y. Chung, 84 : 2688-, 2004

10 V. V. Kuznetsov, 58 : R10159-, 1998

11 J. H. Davies, 46 : 9620-, 1992

12 L. L. Chang, 24 : 593-, 1974

13 S. Luryi, 47 : 490-, 1985

14 Hoon Choi, "Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition" 한국물리학회 48 (48): 648-652, 2006

15 Jung-Hui Lee, "Characteristics of Poly-SiGe Thin Films Prepared at Low Temperatures" 한국물리학회 51 (51): 1134-1137, 2007