Hot-pressing으로 製造된 Fe 燒結材의 plasma nitriding 特性에 미치는 窒化工程變數의 영향에 關한 硏究

손진열 成均館大學校 大學院 2002 국내석사

The purpose of this study is to investigate the effect of plasma nitriding on Fe by fabricated hot-pressing. Plasma nitriding of sintered materials has several advantage over convential processes such as gas or salt bath nitriding. After salt bath treatment a thorough cleaning of the sintered part is necessary to avoid corrosion and oxidation because of the salt which remain in the pores of the material. Plasma nitriding is the most promsing surface treatments for improving the corrosion resistance, oxidation resistance and surface hardness of sintered materials. Pure Fe sintered materials were fabricated by hot-pressing and nitrided under pulsed DC plasma. The large number of parameters in plasma diffusion treatment allows close control of the process so that compound layers and diffusion layer with defined microstructures and properties can be obtained. And this study was to investigate the corrosion resistance, oxidation resistance, surface roughness, surface hardness on pulsed DC plasma nitrided Fe. So this study was analyse the relationship between properties of nitrided Fe sintered material and parameters of pulsed DC plasma nitriding process. The results obtained were as follows: (1) As Duty ratio, gas ratio and nitriding time increased, nitriding layer increased. (2) In the case of Gas pressure and pulse, there were the best nitriding property as 3Torr and 10kHz each other. (3) When the composition of compound layer was mainly Fe_(2)-_(3)N(ε-phase), it showed an increase in oxidation resistance , decrease in surface roughness and high-hardenness. When Fe_(4)N(´-phase) existed it showed an increase in corrosion resistance. (4) As a result analyze of GDOES, Distribution of nitrogen knew that they existed compound layer : 40~30at%, nitriding Layer 1 : 30~12at%, nitriding Layer 2 : 12~1at% and knew a cause of hardenness distribution.

Adhesion and hardness of duplex treated Mo-N/Cu coating films deposited by inductively coupled plasma assisted reactive sputtering

김태윤 서울대학교 대학원 2012 국내석사

The structure and mechanical properties of Mo-N/Cu coating films on AISI M2 steel substrate were studied. These samples were prepared by a duplex treatment consisting of plasma nitriding at temperatures above 650K and subsequent deposition of Mo-N/Cu coatings by inductively coupled plasma sputtering. In the nitride substrates, X-ray diffraction (XRD) showed no diffraction peaks on iron-nitride compounds, and AFM analyses showed an increase in surface roughness. After nitriding, surface hardness of the substrates increased, and the highest hardness was measured for the substrate nitrided at 750K. The nitriding depth tended to become thicker as the nitriding temperature increased. In Mo-N/Cu coating on the nitrided substrate, the (111) and (200) oriented γ-Mo2N/Cu films were obtained, and the adhesion strength of the coatings was determined by a scratch test. When changing the nitriding temperature, the highest adhesion strength was obtained at nitriding temperature of 750K. The whole adhesion strength of the coating was improved from 25 to 65N by plasma nitriding. The hardness of the coating films varied from 16 to 35Gpa due to the difference in surface roughness made by plasma nitriding. In order to measure the accurate hardness value, two methods were proposed: direct removal of surface roughness and modification of Oliver-Pharr method. By using these methods, more reliable hardness values of the coating films were obtained. 본 연구는 AISI M2 철 기판에 증착된 Mo-N/Cu 코팅 박막의 구조와 기계적 성질에 관한 연구이다. 각각의 기판들은 복합처리과정(duplex treatment)을 거쳤으며, 먼저 서로 다른 온도에서 기판을 플라즈마 질화시킨 뒤, ICP가 적용된 PVD 증착법을 이용하여 Mo-N/Cu 코팅을 실시하였다. X 선 회절 분석 결과, 질화된 기판에서는 철 질화물(compound layer)과 관련된 상들이 관찰되지 않았으며 AFM 분석법을 통한 표면 분석 결과, 질화된 기판들은 기존의 철 기판에 비해 표면조도가 향상된 것을 알 수 있었다. 질화 공정을 거친 후, 기판의 표면 경도는 전반적으로 향상되었고, 가장 높은 경도 값은 750K에서 질화된 시편에서 얻어졌다. 기판의 질화 깊이는 질화처리 온도가 증가함에 따라 깊어지는 경향을 보였다. 질화 시편 위에 증착된 Mo-N/Cu 코팅에서는 γ-Mo2N/Cu films의 (111) 면과 (200) 면을 구조로 갖는 박막이 형성되었고, 각 코팅 시편의 접착력은 스크래치 테스터기를 통해 측정되었다. 질화처리 온도를 조절함에 따라, 가장 높은 접착력 값이 750K에서 질화된 시편에서 얻어졌다. 플라즈마 질화 처리를 함으로써, 전반적인 코팅의 접착력은 25N에서 65N으로 향상되었다. 플라즈마 질화처리 시 유발되는 표면조도의 향상에 의하여, 코팅박막의 경도는 16에서 35GPa로 변화하였다. 정확한 경도 값을 측정해내기 위하여, 직접적으로 표면의 조도를 제거하는 방법과 Oliver-Pharr 법을 보정하여 경도를 측정하는 방법이 제안되었다. 이러한 두 방법을 사용하여 코팅 박막의 경도는 어느 정도 신뢰성 있는 값으로 얻어질 수 있었다.

질소 기반 저압 유도 결합 플라즈마의 특성 및 표면 개질 영향 연구

박우진 전북대학교 일반대학원 2023 국내석사

Plasma is the ionized gas phase. Therefore, it contains a lot of active species such as atom, ion, radical and so on. These active species are important because they contribute to the surface modification. Especially, a nitrogen-based plasma is widely applied in the semiconductor industries such as plasma nitridation and low-k material, like organo-silica glass (OSG) etching because it contains active radicals such as N and N2+. The nitrogen-based plasma is used to make the passivation layer of the organic light emitting diode (OLED) and stacked high-k dielectric to supplement the conventional oxygen-based dielectric (SiO2). As the nitrogen-based plasma contains nitrogen atom (N) and nitrogen molecular ion (N2+) which have high reaction energy, the active species can successfully substitute the Si-O bond to Si-N or Si-N-O bond. Besides, in low- k material etching, the nitrogen-based plasma can replace the typical oxygen-based plasma because oxygen-based plasma can cause severe damage to low-k material since active oxygen species can destroy the SiCOH bond of the low-k material. On the other hand, CxFy based-plasma is also usually used in semiconductor industries due to its high chemical activities via CF or F radicals in etching or deposition processes. However, it is well known that the wall contamination through the deposition of carbon-based material on the chamber wall is one of the important issues in tool-to-tool matching. However, it is expected that nitrogen in the plasma can successfully suppress the chamber wall deposition. Therefore, nitrogen-based plasma has been attracted to constitute conventional oxygen-based plasma. So, in this study, we investigate properties of the nitrogen-based plasma such as N2/Ar plasma and N2/C4F8/Ar plasma and thin films properties which are fabricated the plasmas. In N2/Ar plasma, nitrogen atom density decreases from 1.18× 1019 m-3 to 2.56× 1018 m-3 and nitrogen molecular density increases from 4.76×1015 m-3 to 1.71×1016 m-3 according to the N2-Ar flow rate ratio. The refractive index of the silicon oxynitrides thin film increases from 1.54 to 1.57 according to the flow rate ratio. In N2/C4F8/Ar plasma, CF2 radical density decreases from 1.322×1014 m-3 to 1.19×1014 m-3 according to the nitrogen addition. The thickness of the CxFyNz thin film which was attached on the chamber wall decreases from 76.641 to 44.876 according to the nitrogen addition.

Effect of precursor amino ligand types on the properties of silicon nitride thin film deposited by PEALD

김해인 성균관대학교 일반대학원 2023 국내석사

Silicon nitride (SiNx)의 재료로 주로 사용되는 클로로실란 전구체의 경우 고품질의 막질을 얻기 위하여 고온 (>400~500°C)에서 증착이 이루어지고, 반응 부산물로서 파티클과 부식성 물질(HCl)을 생성하는 단점 때문에 다른 타입의 전구체를 이용한 공정을 개발하는 것이 요구되어 왔다. 따라서 저온에서 증착이 가능하고, 부식성 물질을 생성하지 않는 아미노실란 전구체를 이용한 SiNx plasma enhanced atomic layer deposition (PEALD)에 대한 연구를 진행하게 되었다. 아미노실란 전구체의 경우 낮은 step coverage 로 실 적용에 어려움을 겪고 있기 때문에 이를 극복하기 위하여 높은 plasma density 와 높은 N2 분해 특성을 가지는 VHF(Very high frequency, 162 MHz) plasma를 이용하여 step coverage를 개선할 수 있는 공정에 대해 연구하였다. 그 결과 본 연구에서 선택된 아미노실란 전구체인 BTBAS(Bis(tert-butylamino)silane) 와 DSBAS(Di(sec-butylamino)silane)로 증착한 silicon nitride 박막 모두 높은 AR(25:1) 의 패턴에서 Top(상부) 두께 대비 Side(옆면)와 Bottom(바닥) 두께의 비율을 확인하였을 때 100% 의 step coverage를 획득하였다. 그러나 이것을 DHF 100:1에서 wet etch 진행하였을 때에, BTBAS 와 DSBAS 로 증착한 SiNx 박막 간의 wet etch rate의 차이를 확인할 수 있었다. DSBAS 로 증착한 박막 보다 BTBAS 로 증착한 박막에서 더 높은 wet etch rate를 보였다. DSBAS 와 BTBAS 두 전구체의 구조적 차이는 Silicon 원소에 결합되어 있는 아미노 리간드의 개수에서 확인할 수 있다. DSBAS는 하나의 아미노 리간드가 결합되어 있는 mono-aminosilan 이며, BTBAS 는 두개의 아미노 리간드를 가지는 bis-aminosilane 이다. BTBAS 는 두개의 아미노 리간드를 가지고 있기 때문에 표면에 흡착된 후 하나의 아미노 리간드가 분리되지만 나머지 하나의 아미노 리간드는 잔여물로 작용하여 redeposition 현상이 발생할 수 있다. 이러한 메커니즘을 PEALD 공정을 통해 BTBAS 또는 DSBAS 로 증착한 SiNx 박막에 대한 다양한 분석을 통해 증명하였다. XPS(X-ray Photoelectron Spectroscopy) 분석을 통해 두 박막 간 carbon 함량 차이를 확인한 결과, DSBAS를 이용한 SiNx 박막에서 더 낮은 carbon 함량을 확인할 수 있었고, 이 함량의 차이로 인하여 기판온도에 따른 박막 density, roughness 및 전기적 특성인 breakdown voltage에 대한 차이들이 발생하는 것을 확인할 수 있었다. Chlorosilane precursors, which are mainly used as materials for silicon nitride, are generally deposited at high temperatures (>400 ~ 500 °C) to obtain high-quality film quality, but they have the disadvantage of generating particles and corrosive substances (HCl) as reaction by-products. Therefore, in this study, research on aminosilane precursors that can be deposited at low temperatures and do not produce corrosive substances was conducted. In the case of aminosilane precursors, it is known to be difficult to apply for practical applications due to low step coverage. To overcome this problem, the process was performed by using VHF (Very high frequency, 162 MHz) plasma for effective N2 decomposition. As a result, all films deposited in a high aspect ratio of 25:1 pattern with BTBAS(Bis(tert-butylamino)silane) or DSBAS(Di(sec-butylamino)silane), the aminosilane precursors used in this study, showed an excellent step coverage(~ 100%). However, when wet etching was performed in diluted hydrogen fluoride (DHF 100:1), it was confirmed that the wet etch rate of the film deposited with BTBAS was faster than that of the film deposited with DSBAS indicating lower film property for the film deposited with BTBAS. DSBAS is a mono-aminosilane with one amino ligand bound, and BTBAS is a bis-aminosilane with two amino ligands. Since BTBAS has two amino ligands, one amino ligand is separated during precursor adsorption, but the other amino ligand acts as a residue and can remain in the deposited film and cause lower film properties. This mechanism could be confirmed by the difference in carbon content in the SiNx films deposited with BTBAS or DSBAS through PEALD (Plasma Enhanced Atomic Layer Deposition) using XPS (X-ray Photoelectron Spectroscopy) analysis. Differences in density and roughness and breakdown voltage, which is an electrical characteristic, were also confirmed.

Investigation of SiOxNy as Etch Stop Tunnel Layer in TOPCon Silicon Solar Cells

Mingun Kim 고려대학교 대학원 2026 국내석사

Tunnel Oxide Passivated Contact (TOPCon) 구조는 고효율 실리콘 태양전지에서 금속/실리콘 계면 재결합을 억제하기 위한 핵심 기술로, 얇은 SiOx 터널층과 도핑 된 poly-Si를 통해 낮은 접촉 저항과 우수한 passivation특성을 구현한다. 또한 셀 제조 과정에서는 wrap-around 제거, 장파장 빛 흡수 저감, 후면 전류 흐름 확보 등을 위해 poly-Si etching 공정이 필수적으로 수행된다. 그러나 셀이 대면적화 될수록 etchant의 반응 균일성이 저하되며, TMAH 또는 HND(HF/HNO₃/DI) 용액 사용 시 기존 SiOx 터널층이 손상되거나 계면 열화를 유발할 가능성이 높아진다. 본 연구에서는 이러한 문제를 개선하기 위해 습식 산화 기반 SiOx에 PECVD NH3 plasma nitridation을 적용하여 SiOxNy 터널층을 형성하였다. ARXPS 분석을 통해 Si–O–N 결합 형성이 확인되었으며, 박막 두께는 1.66–2.5 nm 범위를 나타냈다. Nitridation 적용 시 interface defect density(Dit)는 4.06×1010 cm-2·eV-1 수준까지 감소하였고, 이에 따라 implied Voc (iVoc)는 약 666 mV에서 676.7 mV로 개선되었다. 또한 양면 전극 증착 후 전기적 측정 결과 시편 저항은 0.52 Ω → 0.21 Ω 수준으로 감소하여 전하 수송 성 역시 개선됨을 확인하였다. Etching test 결과, SiOxNy는 SiOx 대비 식각 진행 속도를 다소 늦추는 경향을 보이며 iVoc 감소를 일정 수준 완화하였으나, 완전한 etch-stop layer로 작용하기에는 한계가 존재하였다. 그럼에도 불구하고 SiOxNy는 기존 SiOx 대비 passivation과 electrical property에서 모두 일정 수준 향상된 성능을 제공하였으며, 이는 대면적 TOPCon 공정에서 터널 층 안정성과 전기적 동작 특성을 개선할 수 있는 유효한 대안임을 시사한다. 요약하자면, NH3 플라즈마 기반 nitridation 공정을 통한 SiOxNy 형성은 강력한 식각 보호층은 아니더라도 passivation 및 전기 특성을 균형적으로 향상시킬 수 있는 개선된 터널 층 후보로서 충분한 연구적 가치를 가진다. Tunnel oxide passivated contacts (TOPCon) have emerged as one of the most effective architectures for high-efficiency crystalline-silicon solar cells, as they suppress carrier recombination at the metal/Si junction by combining an ultrathin SiOx tunneling layer with doped poly-Si. During device fabrication, a poly-Si etching step is typically required—such as for wrap-around removal, mitigation of excess long-wavelength absorption, or improved carrier extraction—which exposes the tunneling oxide to TMAH or HND (HF/HNO3/DI) solutions. As wafer size increases, etching uniformity becomes more difficult to maintain, and the conventional SiOx interlayer is vulnerable to chemical damage or interface deterioration. To enhance the stability of the tunneling layer, this work introduces an SiOxNy film produced by NH3 plasma nitridation of wet-oxidized SiOx using a PECVD system. Angle-resolved X-ray photoelectron spectroscopy confirmed the formation of Si–O–N bonding, with the resulting layer exhibiting a thickness of approximately 1.66–2.5 nm. Following nitridation, the interface defect density (Dit) was reduced to 4.06 × 1010 cm-2·eV-1, accompanied by an increase in implied open-circuit voltage (iVoc) from 666 mV to 676.7 mV. After metallization, the total series resistance decreased from 0.52 Ω to 0.21 Ω, indicating an improvement in charge conduction. Etching experiments in HNA- and TMAH-based solutions revealed that the SiOxNy film delayed structural degradation relative to untreated SiOx, though it did not completely prevent iVoc loss; thus, the layer cannot be considered a perfect etch-stop. Even so, the nitridized tunneling layer delivered moderate but meaningful enhancement in both passivation quality and electrical transport. In summary, NH3 plasma treatment transforms SiOx into an SiOxNy layer that provides incremental gains in passivation and electrical behavior, despite offering only partial etching resistance. These findings suggest that SiOxNy can serve as a practical alternative tunneling layer for large-area TOPCon cells, particularly where process robustness and electrical performance must be balanced.

Plasma Nitriding한 STD61의 高溫磨耗 特性에 關한 硏究

김상식 성균관대학교 1994 국내석사

플라즈마 강화 원자층 증착 Al1-xBxN 박막의 Al:B 조성비에 따른 강유전 특성 변화

이자영 충남대학교 대학원 2026 국내석사

Ferroelectric metal nitride thin films, particularly AlScN, have recently emerged as transformative materials for next-generation electronics, owing to their high polarization, tunable coercive fields, exceptional endurance, and thermal stability. In pursuit of device miniaturization, atomic layer deposition (ALD) offers unparalleled advantages by delivering angstrom-level thickness precision and conformality on complex 3D architectures; yet most prior studies have relied on physical vapor deposition of films several hundred nanometers thick. Here, we demonstrate the plasma-enhanced ALD of B-doped AlN (AlBN) thin films, where systematic control of the AlN:BN cycle ratio precisely regulates B concentration, enabling direct elucidation of the interplay between composition, crystallinity, and ferroelectric behavior. Density functional theory provided mechanistic insight into B incorporation pathways, while piezoresponse force microscopy confirmed local polarization switching across all compositions, with the optimized AlBN film exhibiting the most pronounced P–E hysteresis loop. This composition further displayed low leakage current and endurance exceeding 105 switching cycles. Collectively, these findings establish PEALD-grown AlBN as a robust ferroelectric nitride and highlight its promise as a CMOS-compatible, scalable alternative to AlScN for next-generation non-volatile memory technologies.

수소 어닐 및 게이트 산화막의 질화막 化 공정에 의한 TiN 금속 게이트의 게이트 산화막/실리콘 계면 특성의 개선 및 열화에 관한 연구

이병현 성균관대학교 일반대학원 2008 국내석사

본 연구에서 우리는 TiN 금속 게이트의 산화막/실리콘 계면 특성을 개선하기 위하여 게이트 산화막 형성 전, 수소 어닐과 게이트 산화막 형성 후, 플라즈마 질화막 化(nitridation)을 적용했고 각 공정이 TiN 금속 게이트의 산화막/실리콘 계면 특성에 미치는 영향을 조사했다. 그 결과, 각 공정은 모두 산화막/실리콘 계면에 존재하는 전자 포획 site의 개수(Number of Interface State: Nit)를 감소시키는 긍정적인 결과를 나타냈다. 그러나 신뢰성에 대한 검증을 위해서 이후 적용된 FN 스트레스 이후, 수소 어닐을 적용한 시료는 Nit의 급격한 증가를 나타냈다. 이와 같은 결과를 바탕으로 FN 스트레스 전 수소 어닐을 통한 산화막/실리콘 계면 특성의 개선은 당초 기대했던 실리콘 표면의 거칠기 개선 및 미세결함의 제거 효과가 아닌것으로 판단되었고 조사 결과, 산화막/실리콘 계면 전자 포획 site의 passivation과 depassivation에 관계하는 수소의 영향 때문으로 조사되었다. 이에 반해, 플라즈마 nitridation의 경우 FN 스트레스 이후에도 Nit의 급격한 증가는 나타나지 않았으며, 오히려 증가율의 감소 및 게이트 산화막의 파괴 특성(breakdown characteristic)까지 개선시키는 결과를 나타냈다. 이는 TiN/산화막 계면의 열적 반응의 차단 및 Cl과 같은 불순물들의 산화막/실리콘 계면으로의 확산 방지 같은 효과로 인한 결과로 설명 할 수 있다.

Low Temperature PECVD and Surface Treatment Processes for Silicon Nitride / Organic Hybrid Moisture Barrier Thin Films

안형준 성균관대학교 일반대학원 2017 국내석사

Organic Light Emitting Dispersion (OLED), which is an organic light emitting device, is under active research at home and abroad because it has excellent properties such as low power consumption, fast response time, flexibility, light source and thin thickness. Among them, flexible OLED, which is based on the characteristic of flexibility, is attracting attention as a next generation display. However, in order to apply the flexible OLED to the industry, a polymer plastic film is used as a substrate. Since the polymer film in this case easily permeates moisture, the light emitting layer can not be protected and a dark spot is formed. Therefore, it is necessary to develop a sealing technique for protecting the light emitting layer, and a flexible moisture blocking film is required for the application to the flexible OLED. In a multi-layer structure, the diffusion path increases and has better barrier properties than a single layer structure. In addition, the inner layer is excellent in bending resistance through organic matter. A description of this study follows. Moisture-blocking thin films of organic light emitting devices should be amorphous because water penetration is determined depending on the structure of the film. Accordingly, materials such as aluminum oxide, silicon oxide, and silicon nitride are considered to be suitable materials, and research is proceeding. Among them, since the CVD process is mainly used in the industry, the silicon thin film deposition process is approached. The OH-groups generated internally interact with the penetrated moisture, thereby interfering with the further penetration of moisture, thereby lowering the permeability of water. Therefore, the silicon nitride thin film has a relatively good moisture permeability at room temperature compared to the silicon oxide thin film. Therefore, the silicon nitride thin film was studied. Silicon nitride thin films were fabricated by using Trisilylamine (TSA) and NH3 as precursors to optimize the process for the silicon nitride thin film by optimizing the low temperature PECVD process which does not damage the organic light emitting device. In order to improve the efficiency of the thin film formed by the plasma treatment, the characteristics of the thin film were improved by the plasma surface treatment. After that, using the silicon nitride thin film formed on the inorganic layer in the same organic / inorganic hybrid structure as above, we tried to improve the moisture preventing effect and the bending property as a moisture permeation preventing film usable in flexible OLEDs. The PEN film was used as a substrate and the moisture barrier properties of the PEN film deposited on the PEN substrate were evaluated by Electrical Ca-test Water permeability was measured. The characteristics of the thin film were confirmed by UV-VIS spectrometer, FE-SEM, AFM and XPS, and the light transmittance, surface properties and composition ratio were confirmed. This analysis confirmed that the silicon nitride thin films deposited by the low temperature PECVD process have a similar water permeability compared to the conventional ones, and that the deposited silicon nitride thin films were subjected to plasma surface treatment using O2, N2, and Ar gases When we proceeded, we could get a better WVTR value. Among them, plasma surface treatment using O2 gas showed that the moisture barrier ability of the thin film was improved about 10 times. When a film of an organic / inorganic hybrid structure was formed using a silicon nitride thin film subjected to a low-temperature PECVD process and a plasma surface treatment as described below, the water-repelling ability and bending property of the thin film And the WVTR was found to be less than 10-4 g/m2 ∙day. Through this, it was confirmed that the multilayer barrier film using the plasma surface treatment can be fully utilized as a moisture barrier film for protecting the organic device from oxygen and moisture.

플라즈마 이온질화 방법을 이용하여 CP Ti, Ti-6Al-4V 및 Ti-10Ta-10Nb 합금에 형성한 질화층의 특성

김동훈 전남대학교 대학원 2006 국내석사

플라즈마 이온질화 방법을 이용하여 Ti 및 Ti 합금에 이온질화를 실시하였다. 공정온도 변화에 따른 질화층의 두께변화, 경도변화, 부식시험, 마모시험, scratch test와 EDX분석, XRD에 의한 상 분석, 0.5μm씩 연마 후 XRD 상 분석 등을 실험을 실시하여 결과를 고찰하였다. Plasma assisted chemical vapor deposition(PACVD) 장비를 이용하여 D.C 펄스파워(unipolar), 진공도, 시간, 가스량 등을 고정하였고, 공정온도 750℃, 800℃, 850℃로 변수를 주어서 티타늄 질화처리를 실시하였다. 플라즈마 이온질화 방법에 의해 생성된 TiN 질화 층을 SEM으로 관찰한 결과 TiN 질화 층의 두께는 온도가 증가함에 따라 증가하는 경향을 나타내었으며, XRD 분석결과 δ-TiN상, ε-Ti2N상, α-Ti상 등이 검출되었고 TiN 질화 층의 우선방위는 온도가 증가할수록 TiN (220)으로 우선성장 하는 것이 뚜렷하게 나타내었다. Micro vickers 경도계로 질화층의 표면을 측정한 미세경도는 모재에 따라 달랐고 동일 모재의 경우에는 질화층의 두께의 증가에 따라 미세경도가 증가를 하였으며, 질화온도 850℃에서 높은 미세경도 값을 나타내었다. EDX 분석결과 표면의 질화층에서 안쪽으로 들어갈수록 질소의 량은 점차 감소하는 경향을 나타내었고, Ti 양은 점점 증가하는 경향을 나타내었으며 Ti-6Al-4V 합금의 경우는 Al량이 증가함에 따라 질소의 농도는 급히 감소함을 나타내었다. 850℃에서 질화한 시료를 약0.5μm씩 연마한 후의 XRD 분석결과에서 연마가 진행될수록 TiN상과 Ti2N상이 점점 감소하였음을 확인하였으며, 약4μm를 연마한 후에는 미량의 Ti2N상과 α-Ti상이 존재하는 경향을 나타내었다. 부식시험을 분석한 결과 Ti-6Al-4V의 경우 질화를 했던 시료가 질화를 하지 않은 시료에 비해 부식전위는 0.3V정도 더 높게 나타냈으며, 질화 온도가 증가할수록 0.5V에서 0.68V, 0.72V로 부식전위는 증가를 나타내었다. Ti-10Ta-10Nb의 경우 질화를 했던 시료가 질화를 하지 않은 시료에 비해 부식전위는 0.4V정도 더 높게 나타냈고, 질화온도가 증가할수록 0.6V에서 0.73V, 0.8V로 부식전위는 증가를 나타냈으며, Ti-10Ta-10Nb 합금이 Ti-6Al-4V 합금에 비해 더 좋은 내식성을 나타내었다. Scratch test에 의한 TiN 질화층의 밀착력을 측정한 결과 온도가 증가할수록 접착력은 증가를 하였으며, 850℃에서 모재에 따른 접착력을 측정한 결과 Ti-6Al-4V에서는 평균 85.9N의 높은 접착력을 나타내었으며, CP Ti에서는 평균 70.6N, Ti-10Ta-10Nb에서는 평균 67.5N으로 상대적으로 낮은 접착력을 나타내었다. TiN 질화 층의 마모시험을 실시한 결과를 정성적으로 비교한 결과 질화를 했던 시료가 질화를 하지 않은 시료보다 광학 현미경으로 관찰한 마모트랙 부피의 감소와 낮은 마찰력을 나타내었다. 또한 Ti-10Ta-10Nb 합금의 마찰력이 CP Ti 마찰력보다 더 낮은 마찰력을 나타내었다. The nitride layer was formed on Ti and Ti alloys by plasma nitriding and then nitride layer analysis, hardness test, corrosion test, wear test, scratch test, EDX analysis, XRD analysis were analyzed. The nitriding was preformed in various temperature. At the result of observing TiN nitride layer with SEM, the thickness of nitride layer tended to increase when temperature increased , δ-TiN, ε-Ti2N, α-Ti phases were detected by XRD analysis and the preferred orientation of TiN nitride layer was obviously observed at (220) with increasing temperature. The micro-harness measuring the surface of nitride layer with Micro vickers was various in accordance with the kind of matrix. Micro-hardness increased depending on an increase of nitride layer thickness in case of same matrix and the high micro hardness was shown at 850℃. From XRD analysis after polishing the nitrided specimens at 850℃. As polishing, TiN and Ti2N phases decreased gradually. After polishing with 4μm, the small amount of Ti2N and α-Ti phases were indicated. At the result of corrosion tests, the corrosion potential of nitrided specimen was higher than non-nitrided one by 0.3V, AS nitriding temperature increased, corrosion potential increased from 0.5V to 0.68V, 0.72V in case of Ti-6Al-4V. In case of Ti-10Ta-10Nb, the corrosion potential of nitrided specimen was higher than non-nitrided one by 0.4V. As nitriding temperature increased, corrosion potential increased from 0.6V to 0.73V, 0.8V and Ti-10Ta-10Nb alloy showed better corrosion resistance than Ti-6Al-4V alloy. At the test of adhesive strength by scratch test, as temperature increased, adhesive strength increased, at the test of adhesive strength in accordance with the kind of matrix at 850℃, Ti-6Al-4V showed the highest adhesive strength at an average of 85.9N. On the other hand, CP Ti and Ti-10Ta-10Nb showed lower values such as 70.6N and 67.5N. From the wear test of nitride layer, nitrided specimen showed a decrease of wear track volume, lower frictional force comparing to non-nitrided one.