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전기철도에 의한 전자유도에서의 등가대지저항률 영향에 관한 연구
박종상 우송대학교 철도대학원 2012 국내석사
본 논문은 전기철도 시설로 인하여 주변의 metalic 통신회선에 발생하는 전자유도현상에서 ----- 중략
Amorphous InGaZnO-Based Synaptic Device for Artificial Neural Network Application
양태준 국민대학교 일반대학원 2022 국내석사
In this paper, a memristor, an oxide InGaZnO (IGZO) analog memory for constructing an artificial neural network (ANN) for neuromorphic computing, was fabricated and analyzed. In addition, three types of IGZO memristors were manufactured, each implementing an in-memory computing application. First, instead of applying non-identical pulses such as incremental step pulse programming (ISPP) that cause hardware burden, a synaptic IGZO transistor and an IGZO memristor were combined to improve the symmetry and linearity characteristics of the synaptic weight update characteristics. As a result, edge devices using 1T-1M block and on-chip learning have improved MNIST pattern classification accuracy using deep neural networks (DNN). Second, the 10 x10 crossbar array structure IGZO memristor was processed on a flexible substrate for wearable healthcare and IoT applications. In addition, it has been confirmed that 2x2 and 4x4 pattern classification by binary neural network (BNN) neuromorphic computing is well implemented even under mechanical bending stress. As the last application, an amorphous IGZO-based memristor that responds sensitively to light, especially blue light, has been developed. For circadian rhythm diagnosis, current and conductivity modulation of memristor synaptic device changes according to light, particularly blue light, was confirmed. In addition, a leaky integration & fire (LIF) neuron spiking neural network (SNN) circuit that discriminates color temperature and illuminance using current changes according to light were implemented by combining an IGZO memristor serves as the optical synapse and a HfO2 conducting bridge random access memory (CBRAM) based threshold switch device serves as a neuron. It is found that the circadian light meter (CLM) discriminates the correlated color temperature (CCT) at a fixed visual illuminance and predicts the influence of light pollution. Furthermore, oxide semiconductor synapse/neuron CLM enables the integration with CMOS back end of line (BEOL) and is compatible with spiking neural network (SNN) signal processing. Therefore, it is potentially useful for edge-computing for circadian rhythm diagnosis. 본 논문에서는 뉴로모픽 컴퓨팅을 위한 Artificial Neural Network (ANN) 를 구성을 위한 산화물 InGaZnO 아날로그 메모리인 memristor를 제작 및 분석했다. 또한 3 가지의 InGaZnO memristor를 제작하여 각각, In-memory computing application을 구현하였다. Hardware burden을 유발하는 non-identical pulses를 인가하는 대신, 시냅틱 IGZO transistor와 IGZO memristor를 결합하여 synaptic weigth update 특성의 대칭성 및 선형성 특성을 개선하였다. 이를 통해, Deep Neural Network (DNN)을 이용한 on-chip learning MNIST 패턴 정확도를 증가시켰다. 또한 웨어러블 헬스 케어 장비 및 IOT 응용을 위한 유연 기판 위에 memristor를 제작하였고, vector-matrix multiplication (VMM)을 이용한 Binary Neural Network (BNN) 뉴로모픽 컴퓨팅이 bending과 같은 기계적 스트레스에도 잘 구현됨을 확인하였다. 마지막으로 일주기리듬 진단을 위해 memristor synapse 소자의 빛에 따른 전류 변화 및 conductance modulation을 확인하였다. 또한 memristor 소자와 CBRAM 소자를 결합하여 빛에 따른 전류 변화를 이용하여 색온도 및 조도를 분간하는 Spiking Neural Network (SNN) 회로를 구현하였다. 이를 통해서 엣지 컴퓨팅을 이용하여 써카디안 리듬 진단의 가능성을 보였다.
단 채널 진성 대칭 더블게이트 SOI MOSFET의 문턱 전압 도출에 대한 해석적 모델
본 논문에서는 short-channel intrinsic-body SDG SOI MOSFET의 문턱전압 도출을 위한 간단한 해석적 모델을 제시하였다. Intrinsic 실리콘 채널 영역 및 gate oxide 내에서의 2차원 Laplace 방정식을 반복법(iteration method)으로 풀어 각 영역 내에서의 전위 분포를 채널에 수직한 방향의 좌표에 대해 4차 및 5차 다항식으로 표현하였으며 이로부터 표면전위를 도출하였다. 표면전위의 최소치가 0이 되는 게이트 전압을 문턱전압으로 제안하여 closed-form의 문턱전압 식을 도출하였다. 도출된 문턱전압 표현식을 모의 실험한 결과, 소자의 parameter와 가해진 bias 전압에 대한 정확한 의존성을 확인할 수 있었다. 본 모델은 타 모델에 비해 모델의 도출 과정이 보다 논리적이면서 정확하고 간단한 문턱전압식을 도출해 냈으며 Short-Channel Intrinsic-Body SDG SOI MOSFET 소자 해석과 이해에 있어 많은 도움이 될 것이라고 기대된다. In this paper, a simple analytical model for deriving the threshold voltage of a short-channel intrinsic-body SDG SOI MOSFET is suggested. Using the iteration method, Both Laplace equations in intrinsic silicon body and gate oxide are solved two-dimensionally. Obtained potential distributions in both regions are expressed in terms of fourth and fifth-order of x, where x denotes the coordinate perpendicular to the silicon channel direction. From them, the surface potential is used to describe the threshold voltage in a closed-form. Simulation results show the dependencies of the threshold voltage on the various device parameters and applied bias voltages.
다중환경에서의 Open Graphic API를 이용한 3차원 공간정보 시스템 설계 및 구현
3D mobile GIS application is at the beginning development stage in the GIS domain, compared to other GIS application using handheld devices on wireless communications and various sensor systems. In this study, an integrated 3D authoring and rendering system, based on object-oriented approach, running on handheld devices was proposed, designed and implemented for the graphic pipeline processing in this system. OpenGL(Open Graphic Library)and OpenGL ES(Embedded System) is used for stand-alone platform and mobile platform, respectively. In these systems, 3D objects such as terrain, building, road and user-defined geometric ones can be modeled and integrated for augmented 3D landscape scene generation. In both systems, 3D urban landscape features authoring system by geo-based spatial feature database schema definition is composed of several functions: modeling, editing and manipulating of. 3D landscape objects, generating of geometrically complex type features, and supporting of both database and file system with manipulating of attributes for 3D objects. As well, for realistic scene rendering, texture mapping of complex types of 3D objects with image library is also possible. In developing on the mobile system, main graphical user interface and core components were implemented under EVC 4.0 MFC and tested at PDA as iPack H4100 and LG-DMBPM80 device with Pocket PC. It is expected that dual interfaced 3D geo-spatial information systems supporting registration, modeling, and rendering systems for can be effectively utilized to 3D urban environments analysis, 3D simulation and 3D navigation related to further 3D mobile mapping.