Mediating and Moderating Effects in Ageism and Depression among the Korean Elderly: The Roles of Emotional Reactions and Coping Reponses

김일호,Samuel Noh,전희란 질병관리본부 2016 Osong Public Health and Research Persptectives Vol.7 No.1

Objectives: This study evaluated the relationship between ageism and depression, exploring the stress-mediating and stress-moderating roles of emotional reactions and coping behaviors. Methods: Data were from the 2013 Ageism and Health Study (n = 816), a crosssectional survey of urban and rural community-dwelling seniors aged 60-89 years in South Korea. Participants with at least one experience of ageism reported on their emotional reactions and coping responses. The measure yielded two types of coping: problem-focused (taking formal action, confrontation, seeking social support) and emotion-focused (passive acceptance, emotional discharge). Results: Although ageism was significantly associated with depressive symptoms (B = 0.27, p < 0.0001), the association was entirely mediated by emotional reactions such as anger, sadness, and powerlessness. Problem-focused coping, especially confrontation and social support, seemingly reduced the impact of emotional reactions on depression, whereas emotion-focused coping exacerbated the adverse effects. Conclusion: These findings support the cultural characterization explanation of ageism and related coping processes among Korean elderly and suggest that regulating emotional reactions may determine the efficacy of coping with ageism.

UV를 이용한 수중 의약품 성분의 제거에 관한 연구

김일호,타나카히로아키,야마시타나오유키,이와사키타츠유키,요시노키요시,타쿠보타케시 대한환경공학회 2006 대한환경공학회 학술발표논문집 Vol.2006 No.12

Advanced Chemically Amplified Photoresist Based on Silicon-containing Methacrylate for 193nm Lithography

김일호,김경철,김응렬,이해원 한국고분자학회 2000 한국고분자학회 학술대회 연구논문 초록집 Vol.2000 No.4

Ⅲ-V 화합물 반도체에 대한 오믹접촉

김일호 忠州大學校 2003 한국교통대학교 논문집 Vol.38 No.4

Ohmic mechanisms of metal/semiconductor contacts were reviewed and ohmic contact systems for III-V compound semiconductors were surveyed. This paper also reviewed the conduction currents by the thermionic emission, thermionic-field emission, field emission, recombination in the space charge region and hole injection. The ohmic contacts on GaAs, InGaAs and InP were examined through surveying the papers and patents.

Two New Species of Poecilostomatoid Copepods Associated with the Bivalve Dosinella penicillata in the Yellow Sea

김일호,Kim, Il-Hoi The Korean Society for Integrative Biology 1997 Korean journal of biological sciences Vol.1 No.1

Two new species of poecilostomatoid copepods, each belonging to the genera Myicola (Myicolidae) and Conchyliurus (Clausidiidae), are described, based on specimens taken from the mantle cavity of the bivalve Dosinella penicillata (Reeve). The host bivalve was collected from the intertidal mud flat near Inchon in the Yellow Sea.

PE 필름 두께와 온도에 따른 '상감둥시' 감의 MAP 탈삽 효과

김일호,김지영,남현진,이기우,조두현,이용재,Kim, Il-Ho,Kim, Ji-Young,Nam, Hyun-Jin,Lee, Ki-U,Cho, Doo-Hyun,Lee, Yong-Jae 한국식품저장유통학회 2017 Food Science and Preservation Vol.24 No.6

We investigated the effect of PE film thickness on the modified atmosphere packaging (MAP) deastringency of 'Sanggamdungsi' (Diospyros kaki cv.) astringent persimmon at room temperature ($25^{\circ}C$) and low temperature ($-1^{\circ}C$). The fruits were individually packaged with PE film of which the thickness is 60, 80, 100, 115 or $130{\mu}m$ and stored at room or low ($-1^{\circ}C$) temperature. At room temperature, firmness shows the highest value (23.3-26.5) at $100{\mu}m$ thickness. Top flesh browning and decay was monitored at 20 days after storage, and peel blackening and style-end softening was negligible at optimal thickness. Therefore, optimal film thickness of deastringency at room temperature is $80-100{\mu}m$. At this thickness, the astringency was removed after 5 days and the fruits can be distributed until 10 days after the MAP. At low ($-1^{\circ}C$) temperature, firmness was maintained regardless of film thickness. However, the firmness is higher as the film is thicker. Top flesh browning and decay was not occurred even after 90 days after storage. Peel blackening and style-end softening was monitored at 90 days after storage. Off-flavor was monitored at 115 and $130{\mu}m$ thickness. Therefore, optimal film thickness of deastringency at low ($-1^{\circ}C$) temperature is $80-100{\mu}m$. At this thickness, the astringency was removed after 50 days and the fruits can be distributed until 80 days after the MAP.

$Bi_{0.5}Sb_{1.5}Te_{3}/Bi_{2}Te_{2.4}Se_{0.6}$계 박막형 열전발전 소자의 제작과 작동 특성

김일호,장경욱,Kim Il-Ho,Jang Kyung-Wook 한국진공학회 2006 Applied Science and Convergence Technology Vol.15 No.2

Microwatt power level at relatively high voltage(order of volt) was produced by $Bi_{0.5}Sb_{1.5}Te_{3}/Bi_{2}Te_{2.4}Se_{0.6}$ thin film thermoelectric generators, and maximum output power varied with temperature difference in the square-law relation. Output voltage and current were possible to control by changing the way of electrical connection as well as the number of stacking plate-modules. Variation of open circuit voltage and short circuit current with temperature difference showed a linear relationship. There were, however, some differences in variations; open circuit voltage were dependent on the number of plate-module when connected in series, but it was not for parallel connection. On the other hand, short circuit current showed the opposite behavior to the case of open circuit current.

N형 $Bi_2Te_{2.4}Se_{0.6}$ 박막의 열전 특성에 미치는 두께 및 열처리 효과

김일호,장경욱,Kim Il-Ho,Jang Kyung-Wook 한국진공학회 2005 Applied Science and Convergence Technology Vol.14 No.3

The effective mean free path model was adopted to examine the thickness effect on the thermoelectric properties of flash-evaporated n-type $Bi_2Te_{2.4}Se_{0.6}$ thin films. Annealing effects on the electron concentration and mobility were also studied, and their variations were analyzed in conjunction with antisite defects. Seebeck coefficient and electrical resistivity versus inverse thickness showed a linear relationship, and the mean free path was found to be $5120\AA$ Electron mobility was increased by annealing treatment and electron concentration was decreased considerably due to reduction of antisite defects, so that electrical conductivity was decreased and Seebeck coefficient was increased. When annealed at 473k for 1 hour, Seebeck coefficient and electrical conductivity were $-200\;\mu V/k\;and\;510\omega^{-1}cm^{-1}$, respectively. Therefore, the thermoelectric power factor was improved to be $20\times10^{-4}\;W/(mK^2)$.

AlGaAs/GaAs HBT 에미터 전극용 Pd/Si계 오믹 접촉

김일호 한국진공학회 2003 Applied Science and Convergence Technology Vol.12 No.4

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

AlGaAs/GaAs HBT 응용을 위한 Pd/Si/Pd/Ti/Au 오믹 접촉

김일호,장경욱 한국진공학회 2002 Applied Science and Convergence Technology Vol.11 No.4

Pd/Si/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved at $400^{\circ}C$/20sec. This was related to the formation of Pd-Si compounds by rapid thermal annealing and the in-diffusion of Si atoms to InGaAs surface. However, the specific contact resistivity increased slightly to low-$10^{-6}\Omega \textrm{cm}^2$ at $400^{\circ}C$ for longer than 30 seconds, and to high-$10^{-7}$ at 425~$450^{\circ}C$ for 10 seconds. This resulted from the formation of Pd-Ga compounds. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.