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Pulsed Laser Ablation으로 제작한 C<SUB>60</SUB> 및 Si 박막의 광학적 특성 분석
김민성(M. S. Kim) 한국동력기계공학회 2005 동력시스템공학회지 Vol.9 No.4
We have investigated the fabrication of Si nanoparticles and C<SUB>60</SUB> thin films by pulsed laser ablation. By atomic force microscopy(AFM), the laser-deposited C<SUB>60</SUB> thin film was verified to have surface far smoother than the surfaces of films produced by the conventional evaporation method. The Si deposited at a He atmosphere of 0.2 Torr was with about 60Å height of the Si nanoparticles, suggesting that it was uniformly deposited. We observed visible green emissions spectra in the Si/C<SUB>60</SUB> multilayer films after laser annealing. It is considered that this green emissions is occurred from SiC particles, which is produced reaction of Si nanoparticles with C<SUB>60</SUB> by laser annealing.