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S. E. Moon,Bae Ho Park,E.-K Kim,H.-C. Ryu,H.-Y. Lee,J. Park,K.-H. Park,K.-Y. Kang,M.-H. Kwak,S.-J. Lee,Y.-T. Kim 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.II
Oriented (Ba$_{0.6}$,Sr$_{0.4}$)TiO$_3$ (BST60) and graded (Ba,Sr)TiO$_3$ (BST) films were deposited on MgO (001) single crystals by using a pulsed laser deposition method. Structural properties of the films were investigated by using an X-ray diffractometer. The dielectric properties of the films were investigated under a dc bias field of 0 $-$ 20 V in the temperature region from 173 to 393 K by using interdigital capacitors (IDC) fabricated by photolithography and an etching process. The temperature-dependent small-signal dielectric properties of the films were measured with a Keithley 590 C-V meter. The measured temperature-dependent tunability for an IDC device based on BST60/MgO, BT/$\cdot\cdot$/ST/MgO and ST/$\cdot\cdot$/BT/MgO multilayer structure showed interesting data. The trends of the dielectric properties of the IDC may be due to the fact that they are affected by Curie temperature, lattice constant, strain/stress, {\it etc.}
GAS CHROMATOGRAPHY에 依한 김치의 有機酸 檢索 : 附 콩나물의 有機酸
金浩植,曺悳鉉,李春寧 서울대학교 1963 서울대학교 論文集 Vol.14 No.-
By virtue of gas chromatography several non-volatile organic acids in Kimchi (a Korean food comprising of vegetables and salt, a fermented pickle) were separated. Examination of the fractions resulted in identification of lactic, malonic, succinic, citric, and two unknown acids. Latic acid of Salty "Kimchi" was found in very small amount. It is considered due to the arrested latic acid fermentation by heavy dosage of table salt. Succinic acid was also lessened whereas the yield of citric acid was rather higher in the salty one. The fermentation taking place in Kimchi preparation is not a simple lactic acid fermentation but rather complicated ones. For a reference the organic acids in soybean sprout were detected by the gas chromatography.
장민수,이형철,박영한,이수대,노지현,허필화,김장환 부산대학교 물성연구소 1986 물성연구소연구논문집 Vol.5 No.-
Czochralski 방법으로 Bi₂(Mo0₄)₃ 單結晶을 育成하였으며, 이때 最適育成條件은 1.9∼2.0 mm/hr 引上速度와 12∼13 rpm의 回轉速度가 적합하였다. Bi₂(MoO₄)₃ 單結晶의 단위포는 X-ray 回折法에 의하여 실온에서 Monoclinic 임이 밝혀졌다. 이 結晶에 대한 電氣的 性質의 溫度 依存性을 조사한 결과, 相轉移성이 475±5℃근처에 존재함을 알 수 있었다. A single crystal of Bi₂(MoO₄)₃is grown using the Czochralski method. The optimum growing conditions are obtained with the pulling speed of 1.9-2.0 mm/hr and the rotation speed of 12-13 rpm. The crystal unit cell of Bi₂(MoO₄)₃is determined to be Monoclinic in room temperature by X-ray diffraction method. Through the temperature dependence study of electrical characteristics for this crystal, the phase transition point is found to be around 475±5℃.
Sung Kim,Suk-Ho Choi,C. J. Park,H. Y. Cho,K. H. Cho,R. G. Elliman 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
The structural and the optical properties of Ge nanocrystals (NCs) showing large capacitancevoltage hysteresis have been studied by using infrared photoluminescence (PL), high-resolution transmission electron microscopy (HRTEM), high-resolution X-ray diraction (HRXRD). The memory eect strongly depends on the implant dose, the oxide thickness, and the annealing temperature in metal-oxide-semiconductor devices containing Ge NCs. Well-defined C-V characteristics with large hysteresis are found only for annealing temperatures 950 C where Ge NCs are known to form. HRTEM demonstrates the existence of Ge NCs which are almost aligned at an average distance of about 6.7 nm from the SiO2/Si interface. This suggests that the memory eect can be enhanced by accurately controlling the distribution of Ge NCs with respect to the Si/SiO2 interface, although it is also influenced by implantation-induced deep-level defects and SiGe complexes formed at the interface, as confirmed by PL and HRXRD.
Kim, K.D.,Sheng Tai, W.,Kim, Y.D.,Lee, B.C.,Ho Yang, K.,Park, O.K. Pergamon 2010 Radiation physics and chemistry Vol.79 No.6
Synchrotron-radiation based photoemission spectroscopy (SRPES) was used to examine the changes in the TiO<SUB>2</SUB> surface structures as a result of high-energy e-beam exposure (under atmospheric pressure). The influence of the e-beam pre-treatment on the structure of the post-deposited Pt films on TiO<SUB>2</SUB> was also investigated. High-energy e-beam treatment increased concentrations of OH species and C-O bonds on the surface. The interface reaction between Ti-oxide and Pt was reduced by the e-beam treatment. Consequently, different Pt film surface morphologies could be found on TiO<SUB>2</SUB> with and without e-beam treatment.
C.T. Hsieh,M.W. Lin,C.L. Chang,Y.C. Ho,S.Y. Chen,J. Wang,M.C. Chou,J.Y. Lin,C.H. Pai,P.H. Lin,L.C. Tai,S.H. Chen,G.Y. Tsaur,C.C. Kuo,T.Y. Chien 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.6
A general method for fabricating transient plasma structures with high-intensity laser pulses is developed to gain fine control over laser-plasma interactions. These structures have been used as programmable photonic devices in the development of laser-wakefield accelerators, soft X-ray lasers and plasma nonlinear optics driven by multi-terawatt laser pulses. Plasma ramps are used to control electron injection in laser-wakefield accelerators, plasma waveguides are used to enhance the efficiency of soft X-ray lasers by orders of magnitude and periodic plasma structures are used to achieve quasi-phase matching in relativistic harmonic generation. By scanning the interaction length with the same plasma-fabrication method, tomographic measurements are carried out to resolve the injection/acceleration process in laser-wakefield accelerators and amplification processes in X-ray lasers and relativistic harmonic generation. A theoretical analysis and a computer simulation are also carried out to provide insightful pictures of these processes. These research works show that by controlling plasma structures with optical fabrication methods, laser-plasma interaction can be engineered to expand and enrich the frontier of high-field physics.
Vehicular emission of volatile organic compounds (VOCs) from a tunnel study in Hong Kong
Ho, K. F.,Lee, S. C.,Ho, W. K.,Blake, D. R.,Cheng, Y.,Li, Y. S.,Ho, S. S. H.,Fung, K.,Louie, P. K. K.,Park, D. Copernicus GmbH 2009 Atmospheric chemistry and physics Vol.9 No.19
<P>Abstract. Vehicle emissions of volatile organic compounds (VOCs) were determined at the Shing Mun Tunnel, Hong Kong in summer and winter of 2003. One hundred and ten VOCs were quantified in this study. The average concentration of the total measured VOCs at the inlet and outlet of the tunnel were 81 250 pptv and 117 850 pptv, respectively. Among the 110 compounds, ethene, ethyne and toluene were the most abundant species in the tunnel. The total measured VOC emission factors ranged from 67 mg veh−1 km−1 to 148 mg veh−1 km−1, with an average of 115 mg veh−1 km−1. The five most abundant VOCs observed in the tunnel were, in decreasing order, ethene, toluene, n-butane, propane and i-pentane. These five most abundant species contributed over 38% of the total measured VOCs emitted. The high propane and n-butane emissions were found to be associated with liquefied petroleum gas (LPG)-fueled taxis. Fair correlations were observed between marker species (ethene, i-pentane, n-nonane, and benzene, toluene, ethylbenzene and xylenes - BTEX) with fractions of gasoline-fueled or diesel-fueled vehicles. Moreover, ethene, ethyne, and propene are the key species that were abundant in the tunnel but not in gasoline vapors or LPG. The ozone formation potential from the VOCs in Hong Kong was evaluated by the maximum increment reactivity (MIR). It was found to be 568 mg of ozone per vehicle per kilometer traveled. Among them, ethene, propene and toluene contribute most to the ozone-formation reactivity. </P>