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李宇一,李德東 慶北大學校 1975 論文集 Vol.19 No.-
Ag_2HgI_4 critical temperature resistors(CTR) were fabricated and their electrical characteristics were investigated. The critical temperature range was between 335 and 343˚K, and ψ value of the fabricated CTR was about 3.
李宇一,金秀重,金三卯 경북대학교 공과대학 1976 工大硏究誌 Vol.5 No.-
The background for the specialization in the field of electronics of the College of Engineering, Kyungpook National University has been investigated, and the curricula for the five electronics-related departments and one course have been suggested with special emphasis on the practice-oriented subjects.
Ρ-n接合에 있어서의 Avalanche Breakdown의 遲延時間
李宇一,孫炳基,李健一 慶北大學校 1970 論文集 Vol.14 No.-
The fluctuation of current pulse delay time in the onset of the avalanche breakdown of p-n junctions after the application of a step voltage has been investigated. The pulse counting rate R for the delay time t is expressed in terms of the trapped carrier density, the detrapping time, the activation energy of the trap, temperature, and illumination. The theory predicts the linearity between In R and t provided that the temperature and illumination of the junction are kept constant. The prediction was in good agreement with experimental results.
李宇一,文相在 慶北大學校 1975 論文集 Vol.20 No.-
Pull-in behavior of second order phase locked loop(PLL) with a sinusoidal comparator has been investigated in the absence of noise. The approach is based on the fact that the unlocked behavior of first order PLL can be applied to the transient analysis of second order PLL. With this method, closed form expressions for the pull-in behavior and pull-in time of second order PLL have been obtained.
Corona 放電型 靜電氣除去裝置의 製作 및 特性에 對한 硏究
李宇一 慶北大學校 生産技術硏究所 1966 生産技術 Vol.1 No.-
The efficiency of the static electricity elimination from charged materials was investigated with various types of corona gaps. It was found that the needle-line-gap was the most effective type. To prevent high voltage hazard, we can use a capacitance coupled needle-line-gap, which proved still effective. The single-lined needle gap was more effective than the double-lined needle gap. The plastic gap holder is better than the metal gap holder which some what shields the electric field due to the charged body.
崔昌河,李宇一 경북대학교 센서기술연구소 1990 센서技術學術大會論文集 Vol.1 No.1
The electromagnetic properties of p- and n-channel split drain magnetic sensitive NOSFET fabricated using 2 pm design rules and CMOS process technology has been investigated. The achieved output voltage in the dual drain MOSFET was 160 mV at 10 μA drain current. and magnetic flux density of 10 kG, and the sensitivity was 16 mV/kG. A further higher sensitivity was obtained by introducing a third drain in the split region. In this case, the triple drain MOSFET showed a much higher sensitivity of 30 mV/kG under the same condition. Also, the linearity of output voltage vs. magnetic flux density was excellent.
崔時永,李宇一 경북대학교 공과대학 1975 工大硏究誌 Vol.4 No.-
The aging effects of GaAsP red lightemitting diodes(LEDs) have investigated under forward bias operation. The dominant cause of degradation is considered the increase of nonradiative recombination centers in depletion region and luminescent region due to the forward current. The effects of the above machanism have been confirmed experimentally with1/C^2-V charateristics and the variation of light output.
0.5(PZ-PT)-0.5PNN계 세라믹스에 대한 소결특성과 압전상수의 온도특성
정수태,이우일 釜山工業大學校 1991 論文集 Vol.33 No.-
The sinteristics and the temperature dependency of piezoelectric constants of the 0.5(PZ-PT)-0.5 PNN system are investigated as a function of PT. The pyrochlore phase which is detrimental to both the sinteristics and the piezoelectricites, is formed at above 600℃ with the exothermic reaction and is nearly disappeared at about 870℃ with the endothermic reaction. A expansion of the calcined samples due to the formation of the pyrochlore phase materials, but the sintered samples are shrunk about 14% for the forming sample and those are shown a stable perovskite phase. The samples of the morphotropic system(PT=0.65-0.68) have a higher piezoelectric constant, however the temperature dpendency of their piezoelectric constant are bad. The degree of temperature dependency of the piezoelectric constant is shown in the order of morphotropic, rhombohedral and tetragonal phase. From a temperature dependency of piezoelectric constant point of view, PT=0.7 system is suitable for the piezo-actuator materials.
全東守,李宇一 경북대학교 공과대학 1982 工大硏究誌 Vol.11 No.-
The ZnO/Ti/SiO_2/Si solar cells have been fabricated. The ZnO film was deposited by electron-beam evaporation on the thermally evaporated Ti film. The oxidation and heat-treatment conditions were 500℃-5 min., and 300℃-10 min. in O_2 ambient respectively. The efficiency of the ZnO/Ti/SiO_2/Si solar cell was improved to 10.14% while that of AR (antireflection) coated Ti/SiO_2/Si solar cell was 9.15%.
김우정,박상준,최시영,이우일 경북대학교 센서기술연구소 1990 센서技術學術大會論文集 Vol.1 No.1
A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30 μm - thick were obtained using anisotropic wet chemical etching technique. However, our device showed strong temperature dependence. A computer system was used to compensate for the temperature dependence of the pressure sensor. Interporlation using polynomial functions was shown to be a useful technique for the calibration and compensation of this device. This system offered a maximum error of ±0.005 kgf/cm^(2). Our results show that we could develop an accurate sensor over a wide temperature range ( -20℃ ~ 60℃ ).