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- 저자 : Thaowonkaew, Somporn (검색결과 2 건)
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Athorn Voraeud,Somporn Thaowonkaew,Meena Rittiruam,Mati Horprathum,Tosawat Seetawan 한국물리학회 2016 Current Applied Physics Vol.16 No.3
GeSbTe0.5 hexagonal phase thin film (heGeSbTe0.5) has been deposited on silicon wafer with 1 mm thick silicon dioxide (SiO2/Si) by pulsed dc magnetron sputtering using a 99.99% of 1: 1: 1 ratio of Ge: Sb: Te target at ambient temperature. The asedeposited thin film has been deposited time for 60 min and annealed at temperature 673 K each for 15, 30, 45 and 60 min at high vacuum state. The effected annealing time treatment (ta) on phase preferred orientation, morphology and film thickness (d), atomic composition, carrier concentration (n) and mobility (m) and Seebeck coefficient have been investigated by Xeray diffraction (XRD), fieldeemission scanning electron microscopy (FEeSEM), Auger electron microscopy (AES), Hall Effect measurement and steady state method, respectively. The obtained results of as edeposited thin film is amorphous with Ge:Sb:Te; 1:0.7:0.5 atomic ratio and showed the crystal phases of hexagonal structure with Ge:Sb:Te; 1:1:0.5 atomic ratio after annealing at 673 K. The annealed time 45 min of heGeSbTe0.5 thin film was yielded good thermoelectric properties with highest carrier concentration 3.35 1021 cm3, Seebeck coefficient 78.50 mV K1and power factor 3.95 104 Wm1 K2.
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Vora-ud, Athorn,Kumar, Manish,Jin, Su bong,Muthitamongkol, Pennapa,Horprathum, Mati,Thaowonkaew, Somporn,Chao-moo, Watchara,Thanachayanont, Chancana,Thang, Phan Bach,Seetawan, Tosawat,Han, Jeon Geon Elsevier 2018 Journal of alloys and compounds Vol.763 No.-
<P><B>Abstract</B></P> <P>Optimization of substrate heating during sputtering processes is essential to obtain desired microstructures of deposited thin films, as it provides the required energy flux during the nucleation and growth. In this work, Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> thin films were prepared by a pulsed-DC magnetron sputtering process at optimized plasma conditions (pulsed frequency and pulse reversal time). The effect of substrate heating, in temperature range of 250–450 °C, was systematically investigated on the process throughput and various properties i.e. microstructure, morphology, atomic composition, carrier concentration, mobility and Seebeck coefficient of deposited films. The substrate heating was found to be required to obtain films in cubic crystalline phase. Through the optimization of substrate temperature, process throughput and surface properties, electrical properties as well as thermoelectric power factors were enhanced. The maximum power factor value of thin films was achieved as 0.77 mW m<SUP>–1</SUP> K<SUP>–2</SUP> for the substrate temperature as 400 °C.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> thin films were successfully microstructural controlled by substrate heating. </LI> <LI> Microstructural of Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> thin films were controlled for thermoelectric properties. </LI> <LI> Thermoelectric properties were discussed based on temperature of substrate heating. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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