http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
MEH-PPV/CdS Nanorod Polymer Solar Cells
C. Thanachayanont,K. lnpor,S. Sahasithiwat,V. Meeyoo 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.5
This research was conducted to experimentally screen the suitability of acrylamido-2-methylpropane sulfonic acid-acrylamide (AMPS-AM) copolymer-based nanogels for using as sealants to shut-off water channels in the high-temperature and high-salinity reservoir conditions of the White Tiger oil field. Via in situ intercalative free-radical copolymerization, nanogels have been prepared from montmorillonite-alkyl ammonium clay, AMPS and AM. Two primary compositions of nanogel systems were chosen. A mixture of hexamethylenetetramine (HMTA)/phenyl acetate (PhAc) was used as a crosslinking system. The results obtained from screening the gel properties by using the bottle test method, the test under nitrogen pressure and core flooding under imitated reservoir conditions show that the NANOSEAL-1 and the NANOSEAL-2 nanogels can well satisfy the VietsovPetro (VSP) technical requirements for water isolation materials. This research was conducted to experimentally screen the suitability of acrylamido-2-methylpropane sulfonic acid-acrylamide (AMPS-AM) copolymer-based nanogels for using as sealants to shut-off water channels in the high-temperature and high-salinity reservoir conditions of the White Tiger oil field. Via in situ intercalative free-radical copolymerization, nanogels have been prepared from montmorillonite-alkyl ammonium clay, AMPS and AM. Two primary compositions of nanogel systems were chosen. A mixture of hexamethylenetetramine (HMTA)/phenyl acetate (PhAc) was used as a crosslinking system. The results obtained from screening the gel properties by using the bottle test method, the test under nitrogen pressure and core flooding under imitated reservoir conditions show that the NANOSEAL-1 and the NANOSEAL-2 nanogels can well satisfy the VietsovPetro (VSP) technical requirements for water isolation materials.
Ultra-Low-Power Differential ISFET/REFET Readout Circuit
Apinunt Thanachayanont,Silar Sirimasakul 한국전자통신연구원 2009 ETRI Journal Vol.31 No.2
A novel ultra-low-power readout circuit for a pH-sensitive ion-sensitive field-effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak-inversion and a simple current-mode metal-oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with excellent common-mode rejection ability and good linearity for a single pH range from 4 to 10, while only 4 nA is drawn from a single 1 V supply voltage.
Low-Voltage Current-Sensing CMOS Interface Circuit for Piezo-Resistive Pressure Sensor
Apinunt Thanachayanont,Suttisak Sangtong 한국전자통신연구원 2007 ETRI Journal Vol.29 No.1
A new low-voltage CMOS interface circuit with digital output for piezo-resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo-resistance due to applied pressure and to allow lowvoltage circuit operation. A simple 1-bit first-order deltasigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 μm CMOS technology and draws less than 200 μA from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% nonlinearity error.
Improved CMOS Dynamic D-type Flip-Flops for High-Speed Dual-Modulus Prescaler
C. Fangkaew,A. Thanachayanont 대한전자공학회 2007 ITC-CSCC :International Technical Conference on Ci Vol.2007 No.7
This paper presents new dynamic D-type flipflops (D-FFs) for high-speed dual-modulus prescaler. Using True-Single-Phase-Clock (TSPC) and ratioed logic techniques, the new DFFs are realized with minimum number of transistors, reduced glitch and charge-sharing problems, and thus enabling very high speed operation. To demonstrate the performance of the proposed DFFs, a divide-by-128/129 dual-modulus prescaler has been realized. Simulation results using Spectre with 0.35-㎛ CMOS process parameters show that the prescaler has the maximum operating frequency of 4.4 ㎓ while dissipating 25.6 ㎽ under a 3.3 V power supply voltage.