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Swaine, M. 한국전략문제연구소 1997 전략연구 Vol.4 No.2
RAND 산하 아태정책연구소의 M. Swaine 소장은 최근 WP지(5. 18 자)기고문을 통해 중국을 바라보는 세계의 시각이 혼란스러운 경향을 보이는 가운데 중국의 군현대화 추진이 아시아 평화에 중대 위협이라는 내용의 5가지 잘못된 가정이 제기되고 있다고 지적하면서 이런한 견해는 사태를 과장 평가한것이며 미 국익에도 부합되지 않는다고 주장
Chemical surface passivation of silicon nanowires grown by APCVD
Swain, B.S.,Swain, B.P.,Hwang, N.M. Elsevier 2010 CURRENT APPLIED PHYSICS Vol.10 No.3
Silicon nanowires (SiNWs) are attractive candidate for solar cells and surface passivation has been recognized an important fabrication steps solar cells. The SiNWs were grown on p-type Si (100) substrate by atmospheric pressure chemical vapour deposition. Field emission scanning electron microscopy, Raman spectroscopy and Fourier transform infrared spectroscopy were used to study the atomic bonding and microstructural aspect of silicon nanowires. Hydrogen and chlorine passivation were carried out by dilute HF and HCl solutions. The transient photoconductance decay and effective lifetime of SiNWs/c-Si were study by microwave photoconductance decay. The effective lifetime of SiNWs/p-Si were observed in between 0.5 and 0.8μs.
Swain, B.S.,Lee, S.S.,Lee, S.H.,Swain, B.P.,Hwang, N.M. North Holland ; Elsevier Science Ltd 2010 Chemical physics letters Vol.494 No.4
We report the effect of H<SUB>2</SUB> ambient annealing on the microstructure and vibrational properties of silicon nanowires (SiNWs) grown by atmospheric pressure chemical vapor depositions. The SiNWs were characterized by Fourier Transform Infrared Spectroscopy (FTIR), Field-Emission Scanning Electron Microscopy (FESEM) and High-Resolution Transmission Electron Microscopy (HRTEM). The HRTEM study revealed that the thickness of oxide sheath surrounded by core silicon decreased with increasing H<SUB>2</SUB> ambient annealing and consequently the vibrational spectra were changed. In FTIR spectra, the transverse optic and longitudinal optic peak positions of Si-O symmetry and asymmetry showed a blue shift of the outer oxide of SiNWs. The Si-O-Si peak position remained unchanged at 1080cm<SUP>-1</SUP> while the integrated absorption of Si-O-Si vibration band decreased with increasing H<SUB>2</SUB> flow rate.
Structural and optical properties of H2 diluted c-Si/a-SiO x core-shell silicon nanowire
Swain, B. S.,Swain, B. P.,Mahmood, K.,Yang, S. M.,Hwang, N. M. Springer Science + Business Media 2015 APPLIED PHYSICS A MATERIALS SCIENCE AND PROCESSING Vol.118 No.1
<P>We observed photoluminescence quenching in crystalline (c) Si/amorphous (a) SiO (x) core-shell silicon nanowires (Si-NWs). We observed that the photoluminescence (PL) intensity strongly depends on the stoichiometry of outer a-SiO (x) matrix, which was characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The PL showed a broad-range emission from 1.6 to 2.4 eV with the peak centered at 2.27 eV, which quenched as the oxygen content decreased from 60.5 to 54.6 at.%. Both transverse optic and longitudinal optic signatures of Si-O-Si were shifted to lower wavenumbers, which indicate the modification of chemical networks in core-shell Si-NWs. The minority carrier life time (tau) increased from 3.4 to 7.5 A mu s as the diameter of core Si increased from 22 to 78 nm, indicating the decrease of trap densities and alternation trap states. The reason for PL quenching is mostly attributed to the structural and stoichiometry changes in outer a-SiO (x) of c-Si/a-SiO (x) -NW.</P>
Swain, B.P.,Swain, B.S.,Hwang, N.M. Elsevier Sequoia 2014 JOURNAL OF ALLOYS AND COMPOUNDS Vol.588 No.-
Silicon and carbon based alloys were deposited by hot wire chemical vapor deposition (HWCVD). The microstructure and chemical bonding of these films were characterized by field emission scanning electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The electron microscopy revealed various microstructures were observed for a-C:H, a-SiC:H, a-SiN:H, a-CN:H and a-SiCN:H films. The microstructure of SiN:H films showed agglomerate spherical grains while a-C:H films showed more fractal surface with branched microstructure. However, a-SiC:H, a-CN:H and a-SiCN:H indicated uniform but intermediate surface fractal microstructure. A series of a-SiCN:H films were deposited with variation of NH<SUB>3</SUB> flow rate. The nitrogen incorporation in a-SiCN:H films alter the carbon network from sp<SUP>2</SUP> to sp<SUP>3</SUP> bonding The detail chemical bonding of amorphous films was analyzed by curve fitting method.
Chemical surface passivation of silicon nanowires grown by APCVD
Bhabani S. Swain,황농문,Bibhu P. Swain 한국물리학회 2010 Current Applied Physics Vol.10 No.3
Silicon nanowires (SiNWs) are attractive candidate for solar cells and surface passivation has been recognized an important fabrication steps solar cells. The SiNWs were grown on p-type Si (1 0 0) substrate by atmospheric pressure chemical vapour deposition. Field emission scanning electron microscopy, Raman spectroscopy and Fourier transform infrared spectroscopy were used to study the atomic bonding and microstructural aspect of silicon nanowires. Hydrogen and chlorine passivation were carried out by dilute HF and HCl solutions. The transient photoconductance decay and effective lifetime of SiNWs/c-Si were study by microwave photoconductance decay. The effective lifetime of SiNWs/p-Si were observed in between 0.5 and 0.8 μs.
Swain, Basudev,Shin, Dongyoon,Joo, So Yeong,Ahn, Nak Kyoon,Lee, Chan Gi,Yoon, Jin-Ho Elsevier 2017 waste management Vol.69 No.-
<P><B>Abstract</B></P> <P>Considering the value of silver metal and silver nanoparticles, the waste generated during manufacturing of low temperature co-fired ceramic (LTCC) were recycled through the simple yet cost effective process by chemical-metallurgy. Followed by leaching optimization, silver was selectively recovered through precipitation. The precipitated silver chloride was valorized though silver nanoparticle synthesis by a simple one-pot greener synthesis route. Through leaching-precipitation optimization, quantitative selective recovery of silver chloride was achieved, followed by homogeneous pure silver nanoparticle about 100nm size were synthesized. The reported recycling process is a simple process, versatile, easy to implement, requires minimum facilities and no specialty chemicals, through which semiconductor manufacturing industry can treat the waste generated during manufacturing of LTCC and reutilize the valorized silver nanoparticles in manufacturing in a close loop process. Our reported process can address issues like; (i) waste disposal, as well as value-added silver recovery, (ii) brings back the material to production stream and address the circular economy, and (iii) can be part of lower the futuristic carbon economy and cradle-to-cradle technology management, simultaneously.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Silver rich LTCC an e-waste has been recycled and valorized. </LI> <LI> Selectively, Ag was leached and recovered as nanopowder. </LI> <LI> The process can circulate the Ag within the industry in a close loop. </LI> <LI> Brings back the material to production stream and address the circular economy. </LI> <LI> Can be part of cradle-to-cradle technology and lower the futuristic carbon economy. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>