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한국형 자율주행차 윤리가이드라인 구성과 쟁점에 대한 분석
변순용 ( Byun¸ Sunyong ),황기연 ( Hwang¸ Keeyeon ) 한국윤리학회 2021 倫理硏究 Vol.134 No.1
자율주행자동차(Automated Vehicle, 이하 AV)의 기술이 발전하고 기초적인 수준의 AV가 판매되면서 AV의 보급과 이용에 관한 관심이 나타났다. 실제로 AV가 도로에서 운행되면서 발생하는 사고와 앞으로 더 높은 수준의 AV가 운행되며 날 수 있는 사고는 AV의 기존의 인간이 운전하는 자동차 사고와 다른 윤리적 문제를 야기할 것이다. 이에 AV의 생산자와 탑승자, 비탑승자간에 동의가 이루어 질 수 있는 윤리적 가이드라인의 검토가 필요하다. AV 윤리가이드라인을 구성할 때 생산자, 탑승자, 비탑승자의 주체들과 책임문제를 고려하지 않는다면 더 높은 수준의 AV의 운영 자체가 힘들어질 수 있기 때문에 AV 윤리가이드라인에서는 여러 가지 윤리적 쟁점을 고려하고 우리나라의 상황과 문화에 맞는 윤리적 기준을 제시해야 사회적 합의가 가능할 것이다. 대표적으로 불가피한 위법과 사고, 일반적으로 쉽게 받아들여지는 공리주의적 접근의 장점과 한계, 윤리적 책임의 문제, AV의 윤리적 판단 범위, 투명성과 개인정보의 보호의 문제, 운행판단 기준의 설정 주체 문제를 중심으로 AV 윤리가이드라인의 쟁점을 분석하였다. 앞으로 기술의 발전과 함께 국내에서 운행될 더 수준 높은 AV의 윤리적 가이드라인을 앞서 말한 쟁점을 중심으로 하여 수정방안을 제시하고자 한다. As the technology of Automated Vehicle(hereinafter referred to as AV) has developed and the basic level of AV has been sold, interest in the spread and use of AV has emerged. Accidents that occur while AV is operated on the road and accidents that may occur as AVs are operated at a higher level in the future will cause ethical issues different from those of conventional human-driving car accidents of AV. Therefore, it is necessary to review the ethical guidelines that can be agreed between AV producers, passengers, and non-passengers. When composing the AV ethics guidelines, if the producers, passengers, and non-passengers and responsibility issues are not taken into account, the operation of higher-level AV itself may become difficult. A social consensus will be possible only when ethical standards suitable for the situation and culture of our country are presented. Representatively, it focuses on unavoidable violations and accidents, the advantages and limitations of the generally accepted utilitarian approach, the issue of ethical responsibility, the scope of AV's ethical judgment, the issue of transparency and protection of personal information, and the issue of the subject of setting the operating judgment standard. with the AV ethics guideline. In the future, along with the development of technology, I would like to propose a revision plan focusing on the aforementioned issues regarding the ethical guidelines for higher-level AVs that will be operated in Korea.
Hwang, Sunyong,Kwon, Hyunah,Chhajed, Sameer,Byon, Ji Won,Baik, Jeong Min,Im, Jiseong,Oh, Sang Ho,Jang, Ho Won,Yoon, Seok Jin,Kim, Jong Kyu The Royal Society of Chemistry 2013 The Analyst Vol.138 No.2
<P>We present high performance gas sensors based on an array of near single crystalline TiO<SUB>2</SUB> nanohelices fabricated by rotating oblique angle deposition (OAD). The combination of large surface-to-volume ratio, extremely small size (<30 nm) comparable to the Debye length, a near single crystallinity of TiO<SUB>2</SUB> nanohelices, together with the unique top-and-bottom electrode configuration hugely improves the H<SUB>2</SUB>-sensing performance, including ∼10 times higher response at 50 ppm, approximately a factor of 5 lower detection limit, and much faster response time than the conventional TiO<SUB>2</SUB> thin film devices. Beyond such remarkable performance enhancement, the excellent compatibility of the OAD method compared with the conventional micro-fabrication technology opens a new avenue for monolithic integration of high-performance chemoresistive sensors to fabricate a simple, low cost, reliable, yet fully functional electronic nose and multi-functional smart chips for <I>in situ</I> environmental monitoring.</P> <P>Graphic Abstract</P><P>A near single crystalline TiO<SUB>2</SUB> nanohelix array simply fabricated by an oblique angle deposition method showed enhanced gas sensing performance. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2an35932d'> </P>
Hwang, Sunyong,Han, Nam,Jeong, Hokyeong,Park, Jun Hyuk,Lim, Seung-Hyuk,Cho, Jong-Hoi,Cho, Yong-Hoon,Jeong, Hyeon Jun,Jeong, Mun Seok,Kim, Jong Kyu The American Chemical Society 2017 CRYSTAL GROWTH AND DESIGN Vol.17 No.7
<P>A hendecafacet (HF) microsized light emitter based on an InGaN/GaN multiple quantum well (MQW) is grown via selective area metalorganic chemical vapor deposition. The HF microsized light emitter is found to possess four crystallographic facets, (0001), {1 (1) over bar 01}, {11 (2) over bar2}, and {11-20}. Distinct facet-dependent emission properties, investigated by confocal scanning photoluminescence (PL) and cathodoluminescence (CL) measurements, are found to originate from differences in indium composition and InGaN quantum well thickness of the MQW. Facet-dependent recombination properties, examined by temperature-dependent micro-PL and PL streak images, suggest that the localization energy and nonradiative recombination of carriers at MQW on each facet are varied with the polarization fields and threading dislocations. Besides, scanning time-resolved PL measurements reveal that the recombination lifetime around the edge where different facets meet is shorter than that in the facet regions, implying such nonradiative recombination can be a significant obstacle for achieving high quantum efficiency microstructured light-emitting diodes.</P>
시·공간 정렬을 이용한 다중 IR 대역 센서 모듈 시스템과 이를 이용한 이미지 융합 방법
이선용(Sunyong Lee),황호훈(Ho-hoon Hwang),이창훈(Chang-hoon Lee),박태준(Tae jun Park) 한국자동차공학회 2019 한국자동차공학회 부문종합 학술대회 Vol.2019 No.5
In this paper, we propose a multi-IR sensor module system using frame synchronization and spatial alignment and time-space convergence method using the same. Especially, the space and time of frames and images obtained from thermal infrared sensor module, RGB sensor module and depth sensor module The present invention relates to a multi-IR sensor module system frame synchronization and image fusion method using synchronization.
Pressure-Dependent Growth of Wafer-Scale Few-layer h-BN by Metal–Organic Chemical Vapor Deposition
Kim, Dong Yeong,Han, Nam,Jeong, Hokyeong,Kim, Jaewon,Hwang, Sunyong,Song, Kyung,Choi, Si-Young,Kim, Jong Kyu American Chemical Society 2017 Crystal Growth & Design Vol.17 No.5
<P>A few-layer hexagonal boron nitride (h-BN) films with wafer-scale thickness uniformity were grown by using. a multiwafer metal organic chemical vapor deposition (MOCVD) system at relatively low temperature of 1050 degrees C under various reactor pressures. The effect of the reactor pressure on the structural properties of the h-BN films was systematically investigated by various spectroscopic and, Microscopic analysis. tools including near-edge X-ray absorption-fine structure spectroscopy and transmission electron microscopy. We found that the defects in the MOCVD-grown h-BN films such as nitrogen vacancies and grain boundaries were strongly affected by the reactor pressure, which was elucidated by pressure dependent change of Gibbs free energy for the nuclei formation and reaction rates. Based on our experimental observations, the growth strategies were discussed: for realization of high-quality; multiwafer-scale uniformity h-BN films grown by MOCVD at temperature of 1050 degrees C.</P>
Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers
An Mao,조제희,E. Fred Schubert,Joong Kon Son,Cheolsoo Sone,하우진,Sunyong Hwang,김종규 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.1
GaInN/GaN multiple-quantum-well light-emitting diodes (LEDs) with 0.4 µm-thick AlGaN cladding layers and two quantum wells (QWs), designed for investigating the origin of efficiency droop, are demonstrated to have a lower efficiency droop than typical GaInN/GaN LEDs with 5 QWs. Considering the much less electron leakage over the active region, and the larger carrier density due to the smaller active volume of the LED with AlGaN cladding layers than those of the typical LED, it is suggested that the dominant mechanism responsible for the efficiency droop is electron leakage rather than the Auger recombination which scales with the cubic power of the carrier density.