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Electrical Measurements of an AlGaN/GaN High-electron-mobility Transistor Structure Grown on Si
Zhi-Yao Zhang,Shun-Tsung Lo,Li-Hung Lin,Kuang Yao Chen,J. Z. Huang,Zhi-Hao Sun,C.-T. Liang,N. C. Chen,Chin-An Chang,P. H. Chang 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.9
We report on magnetotransport results for an Al<sub>0.15</sub>Ga<sub>0.85</sub>N/GaN high-electron-mobility-transistor structure grown on a p-type Si (111) substrate. Our results show that there exists an approximately temperature (<i>T</i>)-independent point, which could be ascribed to a direct transition from a weak insulator to a high Landau level filling factor quantum Hall state, exists in the longitudinal resistivity ρ<sub>xx</sub>. The Hall resistivity decreases with increasing <i>T</i>, compelling experimental evidence for electron-electron interaction effects in a weakly-disordered two-dimensional (2D) system. We find that electron-electron interaction effects can be estimated and eliminated, giving rise to a corrected nominally temperature-independent Hall slope. By fitting the low-field magnetotransport data to conventional 2D weak localization theory, we find that the dephasing rate 1/τ<sub>φ</sub> is proportional to <i>T</i>. Moreover, 1/τ<sub>φ</sub> is finite as <i>T</i> → 0, evidence for zero-temperature dephasing in our system.
Thermometry for Dirac Fermions in Graphene
Fan-Hung Liu,Chang-Shun Hsu,Shun-Tsung Lo,Chiashain Chuang,Lung-I Huang,Tak-Pong Woo,Chi-Te Liang,Y. Fukuyama,Y. Yang,R. E. Elmquist,Pengjie Wang,Xi Lin 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.1
We use both the zero-magnetic-field resistivity and the phase coherence time determined by weaklocalization as independent thermometers for Dirac fermions (DF) in multilayer graphene. In thehigh current (I) region, there exists a simple power law TDF / I0.5, where TDF is the effective Diracfermion temperature for epitaxial graphene on SiC. In contrast, TDF / I1 in exfoliated multilayergraphene. We discuss possible reasons for the different power laws observed in these multilayergraphene systems. Our experimental results on DF-phonon scattering may find applications ingraphene-based nanoelectronics.
Non-monotonic Magnetoresistivity in Two-dimensional Electron Systems
Yi-Ting Wang,Tak-Pong Woo,Shun-Tsung Lo,김길호,Chi-Te Liang 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.10
The connection being studied is the one between the non-monotonic magnetoresistivity (MR) andthe electron-electron interaction (EEI) correction in weakly-disordered two-dimensional electronsystems (2DESs) in the ballistic region kBT/~ > 1, where kB, T, , and ~ are the Boltzmannconstant, the temperature, the scattering time, and the reduced Planck constant, respectively. Atzero magnetic field, a transition of the resistivity (T) from the insulating region d/dT < 0 tothe metallic region d/dT > 0 is observed. The MR shows a maximum, and with increasing T,the position of the MR maximum in B increases for both GaAs-based (sample A) and GaN-based(sample B) 2DESs. Our data suggest that the EEI plays an important role in such a non-monotonicMR effect and in the temperature dependence of the resistivity.
Liang, Chi-Te,Lin, Li-Hung,Kuang Yoa, Chen,Lo, Shun-Tsung,Wang, Yi-Ting,Lou, Dong-Sheng,Kim, Gil-Ho,Yuan-Huei, Chang,Ochiai, Yuichi,Aoki, Nobuyuki,Chen, Jeng-Chung,Lin, Yiping,Chun-Feng, Huang,Lin, Sh Springer 2011 Nanoscale research letters Vol.6 No.1
<P>A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.</P>