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Seokhoon Jang,Jieun Kim,Eunbeen Na,Mingyu Song,Jinkyu Choi,KyongHwa Song,Sung‑Hyeon Baeck,Sang Eun Shim 한국탄소학회 2019 Carbon Letters Vol.29 No.3
High-level heteroatom, N and S, dual-doped graphene with an improved mesoporous structure was fabricated via facile in situ carbonization and used as metal-free cathode for non-aqueous lithium oxygen batteries. The prepared cathode delivered an ultrahigh specific capacity of 22,252 mAh/g at a current density of 200 mA/g as well as better cycling reversibility because of the larger and copious mesopores, which can promote the penetration of oxygen, electrons, and lithium ions and the ability to accommodate more discharge products, e.g., Li2O2, in Li–O2 batteries. The material had a high level of heteroatom co-doping in the carbon lattice, which enhanced the electrical conductivity and served as active sites for the oxygen reduction reaction.
Indoor Location Determination Technology for Disaster States
Seokhoon Kim,JaiPyo Sung 중소기업융합학회 2015 중소기업융합학회 국제학술대회논문집 Vol.2 No.1
According to the expanding modern people's life time in the indoor, the importance of indoor LBS have been continuously gotten higher attention. This phenomenon is one of the inevitable IT trends which caused by the evolved computing paradigm, mobile and wireless communication technologies and Internet of Things. Although there are still several problems which are related to the accuracy and precision, it can be certainly overcome in the near future. However, the practical uses of indoor LBS are applied in some limited fields such as marketing, finance, and so on. So, we propose the improved indoor location determination technology, which is very suitable for disaster states, due to the fact that indoor LBS is more helpful technology when such emergency occurs, if the service, which has more applicable algorithms, can be used in the circumstances. The proposed technology will be a priming and trigger to save our life.
Design of the Interpreting and Translating System based on the LBS for Local Tourists
Seokhoon Kim,Sang-Jin Lee 중소기업융합학회 2015 중소기업융합학회 국제학술대회논문집 Vol.2 No.1
Nowadays, MICE business is not only one of the most highlighted business, but also one of the best fields to converge with ICT business in the world. In addition, the limelight is originated by the improved quality of life. That is, there are a lot of foreign tourists who should use the interpreting and translating services. Although there are many interpreting and translating programs, apps, and web services such as Google Translator, Bing Translator, they aren't connected to the LBS services. In spite of the necessity, it hasn't been completely come true in the real life yet. Therefore, we take effort to solve these problems by proposing the LBS base interpreting and translating scheme and services for local tourists. The proposed interpreting and translating scheme use the LBS services to provide tour information, navigating the sightseeing path, etc. Due to the fact that the local tourists usually need some information of the regions. The proposed scheme can automatically provide the interpreted and translated local tour information to the local tourists as a real-time. The proposed scheme will give a chance to lead convenient and interesting local tour.
Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
Seokhoon Kim,전형탁,Hyungchul Kim,Inhoe Kim,Keunwoo Lee,Sanghyun Woo,Taeyong Park,Wooho Jeong 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.4
An ultrathin SiO₂ layer was grown on a H-terminated Si substrate by using remote plasma oxidation. The subsequent HfO₂ deposition on the ultrathin SiO₂ was achieved by a remote plasma atomic layer deposition (RPALD). During the HfO₂ film deposition and rapid thermal annealing (RTA), the ultrathin SiO₂ buffer layer effectively suppressed the formation of Hf silicate layers in the interfacial region. The Hf silicate layer in the interfacial region grew with increasing RTA temperature. The positive fixed oxide charges in the HfO₂ film were reduced with increasing RTA temperature. The thickness of the HfO₂ films with an ultrathin SiO₂ buffer layer showed a lower effective fixed oxide charge density (Qf,eff) due to the shift of the flat band voltage (VFB) toward the positive direction, compared to those with H-terminated Si. The thin interfacial layer of the HfO₂ films with a thin SiO₂ buffer layer resulted in a low equivalent oxide thickness (EOT) value. The leakage current densities of the HfO₂ films increased because of the crystallization of the HfO₂ film after RTA. An ultrathin SiO₂ layer was grown on a H-terminated Si substrate by using remote plasma oxidation. The subsequent HfO₂ deposition on the ultrathin SiO₂ was achieved by a remote plasma atomic layer deposition (RPALD). During the HfO₂ film deposition and rapid thermal annealing (RTA), the ultrathin SiO₂ buffer layer effectively suppressed the formation of Hf silicate layers in the interfacial region. The Hf silicate layer in the interfacial region grew with increasing RTA temperature. The positive fixed oxide charges in the HfO₂ film were reduced with increasing RTA temperature. The thickness of the HfO₂ films with an ultrathin SiO₂ buffer layer showed a lower effective fixed oxide charge density (Qf,eff) due to the shift of the flat band voltage (VFB) toward the positive direction, compared to those with H-terminated Si. The thin interfacial layer of the HfO₂ films with a thin SiO₂ buffer layer resulted in a low equivalent oxide thickness (EOT) value. The leakage current densities of the HfO₂ films increased because of the crystallization of the HfO₂ film after RTA.